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參數(shù)資料
| 型號： | MMBT4124-13 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 69K |
| 代理商： | MMBT4124-13 |
DS30105 Rev. 8 - 2
1 of 3
MMBT4124
www.diodes.com
Diodes Incorporated
Features
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
C
B
E
Mechanical Data
MMBT4124
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT4126)
Ideal for Medium Power Amplification and Switching
Available in Lead Free/RoHS Compliant Version (Note 2)
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
Marking (See Page 2): K1B
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
Characteristic
Symbol
MMBT4124
Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current - Continuous (Note 1)
IC
200
mA
Power Dissipation (Note 1)
Pd
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
417
°C/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
E
B
C
SPICE MODEL: MMBT4124
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| MMBT4124-7 | 功能描述:兩極晶體管 - BJT 25V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT4124-7-F | 功能描述:兩極晶體管 - BJT 25V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT4124LT1 | 功能描述:兩極晶體管 - BJT 200mA 30V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT4124LT1G | 功能描述:兩極晶體管 - BJT 200mA 30V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT4125LT1 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
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