參數(shù)資料
型號(hào)： MMBT3906T
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 660K
代理商： MMBT3906T
MMBT3906T
PNP General
Purpose Transistor
Features
Surface Mount SOT-523 Package
Epitaxial Planar Die Construction
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
-40
V
VCBO
Collector-Base Voltage
-40
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current
-200
mA
RθJA
Typical Thermal Resistance Junction
to Ambient
833
℃
/W
PD
Power Dissipation
150
mW
TJ
Junction Temperature
-55 to +150
℃
TSTG
Storage Temperature
-55 to +150
℃
Electrical Characteristics @ 25
°C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1.0mAdc, IB=0)
-40
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-10Adc, IE=0)
-40
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-10Adc, IC=0)
-5.0
Vdc
ICBO
Collector Cut-off Current
(VCB=-30Vdc, IE=0)
-50
nAdc
IEBO
Emitter Cut-off Current
(VEB=-5Vdc, IC=0)
-50
nAdc
ON CHARACTERISTICS
hFE
DC Current Gain*
(IC=-0.1mAdc, VCE=-1.0Vdc)
(IC=-1.0mAdc, VCE=-1.0Vdc)
(IC=-10mAdc, VCE=-1.0Vdc)
(IC=-50mAdc, VCE=-1.0Vdc)
(IC=-100mAdc, VCE=-1.0Vdc)
60
80
100
60
30
300
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1.0mAdc)
(IC=-50mAdc, IB=-5.0mAdc)
-0.25
-0.4
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1.0mAdc)
(IC=-50mAdc, IB=-5.0mAdc)
-0.65
-0.85
-0.95
Vdc
SOT-523
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.059
.067
1.50
1.70
B
.030
.033
0.75
0.85
C
.057
.069
1.45
1.75
D
.020 Nominal
0.50Nominal
E
.035
.043
0.90
1.10
G
.000
.004
.000
.100
H
.028
.031
.70
0.80
J
.004
.008
.100
.200
K
.010
.014
.25
.35
A
C
B
D
E
G
H
J
DIMENSIONS
K
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
Revision: 2
2006/05/13
TM
Micro Commercial Components
E
B
C
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Marking:3N
www.mccsemi.com
1 of 4
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT3906-T 功能描述:兩極晶體管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT3906-T/R 制造商:Micro Commercial Components (MCC) 功能描述:TRANSISTOR PNP SO
MMBT3906T_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT3906T_11 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP General Purpose Transistor
MMBT3906T_2 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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