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參數(shù)資料
| 型號： | MMBT3906RFG |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | GREEN, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 376K |
| 代理商： | MMBT3906RFG |
MMBT3906
350mW, PNP Small Signal Transistor
Small Signal Diode
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Min
Max
Min
Max
Case : SOT- 23 small outline plastic package
2.70
3.10
0.106
0.122
1.20
1.65
0.047
0.065
0.30
0.50
0.012
0.020
1.78
2.04
0.070
0.080
2.20
3.00
0.087
0.118
0.95
1.40
0.037
0.055
Package
Packing
Marking
SOT-23
3K / 7" Reel
2A
SOT-23
3K / 7" Reel
2A
Maximum Ratings
Notes:1. Valid provided that electrodes are kept at ambient temperature
SOT-23
Type Number
Symbol
Epitaxial planar die construction
Weight : 0.008gram (approximately)
Maximum Ratings and Electrical Characteristics
C
Unit (mm)
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
-5
350
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
Unit (inch)
Dimensions
Suggested PAD Layout
V
-40
Rating at 25°C ambient temperature unless otherwise specified.
Ordering Information
Part No.
MMBT3906 RF
B
Power Dissipation
PD
Value
0.022 REF
Features
Mechanical Data
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
A
0.550 REF
High temperature soldering guaranteed: 260°C/10s
F
D
E
G
Marking Code : 2A
Junction and Storage Temperature Range
TJ, TSTG
Emitter-Base Voltage
VEBO
Collector Current
IC
Thermal resistance junction-ambient
RthJA
MMBT3906 RFG
Units
°C
-200
-55 to + 150
mA
mW
V
357
°C/W
B
A
C
D
F
E
G
2 Emitter
3 Collector
1 Base
2.0
0.079
0.95
0.037
0.9
0.035
0.8
0.031
Version : C10
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| MMBT3906T/R13 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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| MMBT3906T/R7 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBT3906T/R | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBT3906T/R_NL | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3906SL | 功能描述:兩極晶體管 - BJT 40V 200mA PNP Epitaxial Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3906SL_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Silicon Transistor |
| MMBT3906T | 功能描述:兩極晶體管 - BJT PNP Epitaxial Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3906-T | 功能描述:兩極晶體管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3906-T/R | 制造商:Micro Commercial Components (MCC) 功能描述:TRANSISTOR PNP SO |
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