- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385626 > MMBT2369ALT1 (ON SEMICONDUCTOR) Switching Transistors NPN Silicon(NPN型開關(guān)晶體管) PDF資料下載
參數(shù)資料
| 型號： | MMBT2369ALT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Switching Transistors NPN Silicon(NPN型開關(guān)晶體管) |
| 中文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, TO-236, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 98K |
| 代理商： | MMBT2369ALT1 |
MMBT2369LT1, MMBT2369ALT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 3)
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
15
Vdc
CollectorEmitter Breakdown Voltage
(I
C
= 10 Adc, V
BE
= 0)
V
(BR)CES
40
Vdc
CollectorBase Breakdown Voltage
(I
C
= 10 Adc, I
E
= 0)
V
(BR)CBO
40
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
4.5
Vdc
Collector Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0)
(V
CB
= 20 Vdc, I
E
= 0, T
A
= 150
°
C)
I
CBO
0.4
30
Adc
Collector Cutoff Current
(V
CE
= 20 Vdc, V
BE
= 0)
MMBT2369A
I
CES
0.4
Adc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 0.35 Vdc)
(I
C
= 10 mAdc, V
CE
= 0.35 Vdc, T
A
= 55
°
C)
(I
C
= 30 mAdc, V
CE
= 0.4 Vdc)
(I
C
= 100 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369
MMBT2369A
h
FE
40
40
20
30
20
20
120
120
CollectorEmitter Saturation Voltage (Note 3)
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 10 mAdc, I
B
= 1.0 mAdc, T
A
= +125
°
C)
(I
C
= 30 mAdc, I
B
= 3.0 mAdc)
(I
C
= 100 mAdc, I
B
= 10 mAdc)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
V
CE(sat)
0.25
0.20
0.30
0.25
0.50
Vdc
BaseEmitter Saturation Voltage (Note 3)
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 10 mAdc, I
B
= 1.0 mAdc, T
A
= 55
°
C)
(I
C
= 30 mAdc, I
B
= 3.0 mAdc)
(I
C
= 100 mAdc, I
B
= 10 mAdc)
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
V
BE(sat)
0.7
0.85
1.02
1.15
1.60
Vdc
SMALLSIGNAL CHARACTERISTICS
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
4.0
pF
Small Signal CurrentGain
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
h
fe
5.0
SWITCHING CHARACTERISTICS
Storage Time
(I
B1
= I
B2
= I
C
= 10 mAdc)
t
s
5.0
13
ns
TurnOn Time
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc, I
B1
= 3.0 mAdc)
t
on
8.0
12
ns
TurnOff Time
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc, I
B1
= 3.0 mAdc, I
B2
= 1.5 mAdc)
3. Pulse Test: Pulse Width
300 s, Duty Cycle
t
off
10
18
ns
2.0%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBT2484LT1 | Low Noise Transistor(低噪聲晶體管) |
| MMBT2907ALT1 | General Purpose Transistor(通用晶體管) |
| MMBT2907AWT1 | General Purpose Transistor PNP Silicon(硅PNP通用晶體管) |
| MMBT3906LT3 | General Purpose Transistor PNP Silicon(PNP型通用晶體管) |
| MMBT3906TT1 | General Purpose Transistors PNP Silicon(PNP型通用晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2369ALT1G | 功能描述:兩極晶體管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2369ALT3 | 功能描述:兩極晶體管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2369ALT3G | 功能描述:兩極晶體管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2369-G | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:GENERAL PURPOSE TRANSISTORS |
| MMBT2369L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Switcing Transistors |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。