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參數(shù)資料
| 型號： | MMBT2907AWT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose Transistor PNP Silicon(硅PNP通用晶體管) |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419-04, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 35K |
| 代理商： | MMBT2907AWT1 |
Semiconductor Components Industries, LLC, 2004
April, 2004 Rev. 3
1
Publication Order Number:
MMBT2907AWT1/D
MMBT2907AWT1
Preferred Device
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC70/SOT323 package which
is designed for low power surface mount applications.
Features
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
60
Vdc
CollectorBase Voltage
V
CBO
60
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
Collector Current Continuous
I
C
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 1) T
A
= 25
°
C
P
D
150
mW
Thermal Resistance JunctiontoAmbient
R
JA
833
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to
+150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
MMBT2907AWT1
SC70
3000 Tape & Reel
MARKING DIAGRAM
1
2
3
SC70/SOT323
CASE 41904
STYLE 3
COLLECTOR
3
1
BASE
2
EMITTER
Preferred
devices are recommended choices for future use
and best overall value.
20
= Specific Device Code
20
MMBT2907AWT1G
SC70
(PbFree)
3000 Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2907AWT1G | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2907AWT1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR PNP -60V |
| MMBT2907FW | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
| MMBT2907-G | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:GENERAL PURPOSE TRANSISTORS |
| MMBT2907L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP General Purpose Transistor |
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