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參數(shù)資料
| 型號(hào)： | MMBT2907AWT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | General Purpose Transistor PNP Silicon(硅PNP通用晶體管) |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419-04, SC-70, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 35K |
| 代理商： | MMBT2907AWT1 |
MMBT2907AWT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 2)
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
60
Vdc
CollectorBase Breakdown Voltage
(I
C
= 10 mAdc, I
E
= 0)
V
(BR)CBO
60
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
5.0
Vdc
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB(off)
= 0.5 Vdc)
I
BL
50
nAdc
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB(off)
= 0.5 Vdc)
I
CEX
50
nAdc
ON CHARACTERISTICS
(3)
DC Current Gain (Note 2)
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 150 mAdc, V
CE
= 10 Vdc)
(I
C
= 500 mAdc, V
CE
= 10 Vdc)
H
FE
75
100
100
100
50
CollectorEmitter Saturation Voltage (Note 2)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
0.4
1.6
Vdc
BaseEmitter Saturation Voltage (Note 2)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
1.3
2.6
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(I
C
= 50 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
200
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
8.0
pF
Input Capacitance
(V
EB
= 2.0 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
30
pF
SWITCHING CHARACTERISTICS
TurnOn Time
t
on
45
Delay Time
(V
CC
= 30 Vdc,
I
= 150 mAdc, I
= 15 mAdc)
C
B1
t
d
10
Rise Time
t
r
40
ns
Storage Time
t
s
80
Fall Time
(V
CC
= 6.0 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
f
30
TurnOff Time
t
off
100
2. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2907AWT1G | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2907AWT1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR PNP -60V |
| MMBT2907FW | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
| MMBT2907-G | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:GENERAL PURPOSE TRANSISTORS |
| MMBT2907L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP General Purpose Transistor |
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