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參數(shù)資料
| 型號： | MMBT3906LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose Transistor PNP Silicon(PNP型通用晶體管) |
| 中文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, TO-236, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 78K |
| 代理商： | MMBT3906LT3 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 5
1
Publication Order Number:
MMBT3906LT1/D
MMBT3906LT1
Preferred Device
General Purpose Transistor
PNP Silicon
Features
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
40
Vdc
CollectorBase Voltage
V
CBO
40
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
Collector Current Continuous
I
C
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 1) @ T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
556
°
C/W
Total Device Dissipation Alumina
Substrate, (Note 2) @ T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
417
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MMBT3906LT1
SOT23
3,000 / Tape & Reel
MMBT3906LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
MMBT3906LT3
SOT23
10,000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBT3906LT3G
SOT23
(PbFree)
10,000 / Tape & Reel
COLLECTOR
3
1
BASE
2
EMITTER
SOT23 (TO236)
CASE 318
STYLE 6
1
2
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2A M
2A = Specific Device Code
M
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3906LT3G | 功能描述:兩極晶體管 - BJT 200mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3906M | 制造商:JIANGSU 制造商全稱:Jiangsu Changjiang Electronics Technology Co., Ltd 功能描述:TRANSISTOR |
| MMBT3906Q-7-F | 制造商:Diodes Incorporated 功能描述:BJT,PNP,200MA,40V,MMBT3906,SOT23,AEC-Q - Tape and Reel |
| MMBT3906R-DK | 制造商:Diodes Incorporated 功能描述:200 MA, 40 V, PNP, SI, SMALL SIGNAL TRANSISTOR |
| MMBT3906RF | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:350mW, PNP Small Signal Transistor |
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