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參數(shù)資料
| 型號： | MMBT2222LT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 126K |
| 代理商： | MMBT2222LT3G |
MMBT2222LT1G, MMBT2222ALT1G
http://onsemi.com
5
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.0
0.1
CAP
ACIT
ANCE
(pF)
1.0
2.0 3.0
5.0 7.0 10
20 30
50
0.2 0.3
0.5 0.7
Ccb
20
30
Ceb
Figure 10. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
f T
,CURRENT-GAIN
BANDWIDTH
PRODUCT
(MHz)
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70 100
VCE = 20 V
TJ = 25°C
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A)
1
0.1
0.01
0.001
0.01
0.1
1
0.1
0.01
0.001
0.2
0.3
0.5
0.7
0.8
1.0
1.1
1.3
Figure 13. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A)
1
0.1
0.01
0.001
0.2
0.3
0.5
0.6
0.7
0.9
1.1
1.2
V
CE(sat)
,COLLECT
OR
EMITTER
SA
TURA
TION
VOL
TAGE
(V)
V
BE(
sat)
,BASE
EMITTER
SA
TURA
TION
VOL
TAGE
(V)
V
BE(
on)
,BASE
EMITTER
VOL
TAGE
(V)
IC/IB = 10
150°C
55°C
25°C
0.4
0.6
0.9
1.2
IC/IB = 10
150°C
55°C
25°C
0.4
0.8
1.0
VCE = 1 V
150°C
55°C
25°C
Figure 14. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
-0.5
0
+0.5
COEFFICIENT
(mV/
C)
-1.0
-1.5
-2.5
°
RqVC for VCE(sat)
RqVB for VBE
-2.0
0.1
1.0 2.0
5.0
10
20
50
0.2
0.5
100 200
500
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PDF描述 |
|---|---|
| MMBT2222LT3 | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT2222ALT3 | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT2369-HIGH | 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AA |
| MMBT2369 | 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2222Q | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
| MMBT2222W | 制造商:SEMTECH_ELEC 制造商全稱:SEMTECH ELECTRONICS LTD. 功能描述:NPN Silicon Epitaxial Planar Medium Power Transistor |
| MMBT222A | 制造商:FCS 功能描述: |
| MMBT222AWTI | 制造商: 功能描述: 制造商:undefined 功能描述: |
| MMBT2369 | 功能描述:兩極晶體管 - BJT NPN HIGH SPD SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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