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參數(shù)資料
| 型號(hào)： | MMBT2222LT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 126K |
| 代理商： | MMBT2222LT3G |
Semiconductor Components Industries, LLC, 2010
October, 2009 Rev. 9
1
Publication Order Number:
MMBT2222LT1/D
MMBT2222LT1G,
MMBT2222ALT1G
General Purpose Transistors
NPN Silicon
Features
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
MMBT2222LT1G
MMBT2222ALT1G
VCEO
30
40
Vdc
CollectorBase Voltage
MMBT2222LT1G
MMBT2222ALT1G
VCBO
60
75
Vdc
EmitterBase Voltage
MMBT2222LT1G
MMBT2222ALT1G
VEBO
5.0
6.0
Vdc
Collector Current Continuous
IC
600
mAdc
Collector Current Peak (Note 3)
ICM
1100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance, JunctiontoAmbient
RqJA
556
°C/W
Total Device Dissipation Alumina
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance, JunctiontoAmbient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg 55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
SOT23
CASE 318
STYLE 6
MARKING DIAGRAM
xxx = 1P or M1B
M
= Date Code*
G
= PbFree Package
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
1
2
1
3
xxx M G
G
相關(guān)PDF資料 |
PDF描述 |
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| MMBT2222LT3 | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
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| MMBT2369-HIGH | 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AA |
| MMBT2369 | 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2222Q | 制造商:SECOS 制造商全稱(chēng):SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
| MMBT2222W | 制造商:SEMTECH_ELEC 制造商全稱(chēng):SEMTECH ELECTRONICS LTD. 功能描述:NPN Silicon Epitaxial Planar Medium Power Transistor |
| MMBT222A | 制造商:FCS 功能描述: |
| MMBT222AWTI | 制造商: 功能描述: 制造商:undefined 功能描述: |
| MMBT2369 | 功能描述:兩極晶體管 - BJT NPN HIGH SPD SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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