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參數(shù)資料
| 型號(hào)： | MMBT2222LT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 126K |
| 代理商： | MMBT2222LT3G |
MMBT2222LT1G, MMBT2222ALT1G
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Unit
Max
Min
Symbol
SMALLSIGNAL CHARACTERISTICS
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
MMBT2222A
rb, Cc
150
ps
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)
MMBT2222A
NF
4.0
dB
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
(VCC = 30 Vdc, VBE(off) = 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
10
ns
Rise Time
tr
25
Storage Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
225
ns
Fall Time
tf
60
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
5. fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. TurnOn Time
Figure 2. TurnOff Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
-2 V
< 2 ns
0
1.0 to 100
ms,
DUTY CYCLE
≈ 2.0%
1 k
W
+30 V
200
CS* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100
ms,
DUTY CYCLE
≈ 2.0%
1 k
+30 V
200
CS* < 10 pF
-4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
200
300
500 700
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
h
FE
,DC
CURRENT
GAIN
TJ = 125°C
25
°C
-55
°C
VCE = 1.0 V
VCE = 10 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2222Q | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
| MMBT2222W | 制造商:SEMTECH_ELEC 制造商全稱:SEMTECH ELECTRONICS LTD. 功能描述:NPN Silicon Epitaxial Planar Medium Power Transistor |
| MMBT222A | 制造商:FCS 功能描述: |
| MMBT222AWTI | 制造商: 功能描述: 制造商:undefined 功能描述: |
| MMBT2369 | 功能描述:兩極晶體管 - BJT NPN HIGH SPD SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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