參數(shù)資料
型號(hào)： MMBT2222LT3G
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
封裝： HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 126K
代理商： MMBT2222LT3G
MMBT2222LT1G, MMBT2222ALT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
MMBT2222
MMBT2222A
V(BR)CEO
30
40
Vdc
CollectorBase Breakdown Voltage (IC = 10 mAdc, IE = 0)
MMBT2222
MMBT2222A
V(BR)CBO
60
75
Vdc
EmitterBase Breakdown Voltage (IE = 10 mAdc, IC = 0)
MMBT2222
MMBT2222A
V(BR)EBO
5.0
6.0
Vdc
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MMBT2222A
ICEX
10
nAdc
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
MMBT2222
(VCB = 60 Vdc, IE = 0)
MMBT2222A
(VCB = 50 Vdc, IE = 0, TA = 125°C)
MMBT2222
(VCB = 60 Vdc, IE = 0, TA = 125°C)
MMBT2222A
ICBO
0.01
10
mAdc
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
MMBT2222A
IEBO
100
nAdc
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MMBT2222A
IBL
20
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = 55°C)
MMBT2222A only
(IC = 150 mAdc, VCE = 10 Vdc) (Note 4)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 4)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 4)
MMBT2222
MMBT2222A
hFE
35
50
75
35
100
50
30
40
300
CollectorEmitter Saturation Voltage (Note 4)
(IC = 150 mAdc, IB = 15 mAdc)
MMBT2222
MMBT2222A
(IC = 500 mAdc, IB = 50 mAdc)
MMBT2222
MMBT2222A
VCE(sat)
0.4
0.3
1.6
1.0
Vdc
Base Emitter Saturation Voltage (Note 4)
(IC = 150 mAdc, IB = 15 mAdc)
MMBT2222
MMBT2222A
(IC = 500 mAdc, IB = 50 mAdc)
MMBT2222
MMBT2222A
VBE(sat)
0.6
1.3
1.2
2.6
2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (Note 5)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
MMBT2222
MMBT2222A
fT
250
300
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MMBT2222
MMBT2222A
Cibo
30
25
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
hie
2.0
0.25
8.0
1.25
kW
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
hre
8.0
4.0
X 104
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
hfe
50
75
300
375
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
hoe
5.0
25
35
200
mmhos
相關(guān)PDF資料
PDF描述
MMBT2222LT3 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT2222ALT3 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT2369-HIGH 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AA
MMBT2369 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT2369A/S62Z 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT2222Q 制造商:SECOS 制造商全稱(chēng):SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor
MMBT2222W 制造商:SEMTECH_ELEC 制造商全稱(chēng):SEMTECH ELECTRONICS LTD. 功能描述:NPN Silicon Epitaxial Planar Medium Power Transistor
MMBT222A 制造商:FCS 功能描述:
MMBT222AWTI 制造商: 功能描述: 制造商:undefined 功能描述:
MMBT2369 功能描述:兩極晶體管 - BJT NPN HIGH SPD SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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