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參數(shù)資料
| 型號： | MMBT2222LT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 126K |
| 代理商： | MMBT2222LT3G |
MMBT2222LT1G, MMBT2222ALT1G
http://onsemi.com
4
V
CE
,COLLECT
OR-EMITTER
VOL
TAGE
(VOL
TS)
1.0
0.8
0.6
0.4
0.2
0
0.005
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
TJ = 25°C
IC = 1.0 mA
10 mA
150 mA
500 mA
Figure 5. TurnOn Time
IC, COLLECTOR CURRENT (mA)
70
100
200
50
t,TIME
(ns)
10
20
70
5.0
100
5.0 7.0
30
50
200
10
30
7.0
20
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
3.0
2.0
300
500
t,TIME
(ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. TurnOff Time
IC, COLLECTOR CURRENT (mA)
10
20
70
100
5.0 7.0
30
50
200
300
500
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
t
′s = ts - 1/8 tf
tf
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
NF
,NOISE
FIGURE
(dB)
1.0 2.0
5.0 10
20
50
0.2
0.5
0
100
NF
,NOISE
FIGURE
(dB)
0.01 0.02
0.05
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 W
500
mA, RS = 200 W
100
mA, RS = 2.0 kW
50
mA, RS = 4.0 kW
f = 1.0 kHz
IC = 50 mA
100
mA
500
mA
1.0 mA
4.0
6.0
8.0
10
2.0
0
50
100
200
500
1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
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PDF描述 |
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| MMBT2222LT3 | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
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| MMBT2369-HIGH | 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AA |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2222Q | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
| MMBT2222W | 制造商:SEMTECH_ELEC 制造商全稱:SEMTECH ELECTRONICS LTD. 功能描述:NPN Silicon Epitaxial Planar Medium Power Transistor |
| MMBT222A | 制造商:FCS 功能描述: |
| MMBT222AWTI | 制造商: 功能描述: 制造商:undefined 功能描述: |
| MMBT2369 | 功能描述:兩極晶體管 - BJT NPN HIGH SPD SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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