參數(shù)資料
型號： MMBT2222AT-13
廠商： DIODES INC
元件分類： 小信號晶體管
英文描述： 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： ULTRA SMALL, PLASTIC PACKAGE-3
文件頁數(shù)： 2/4頁
文件大小： 82K
代理商： MMBT2222AT-13
DS30268 Rev. 5 - 2
2 of 4
MMBT2222AT
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
75
V
IC = 10
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICEX
10
nA
VCE = 60V, VEB(OFF) = 3.0V
Base Cutoff Current
IBL
20
nA
VCE = 60V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
35
50
75
100
40
IC = 100
mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.3
1.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.6
1.2
2.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
8pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—30
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
300
MHz
VCE = 20V, IC = 20mA,
f = 100MHz
Input Impedance
hie
0.25
1.25
k
W
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
Voltage Feedback Ratio
hre
4.0
X 10-4
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
Small-Signal Current Gain
hfe
75
375
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
Output Admittance
hoe
25
200
mS
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
Noise Figure
NF
4.0
dB
VCE = 10 Vdc, IC = 100
mAdc,
RS = 1.0 k ohms, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
10
ns
VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
Rise Time
tr
25
ns
Storage Time
ts
225
ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Fall Time
tf
60
ns
Notes:
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT2222AT-7-F.
Device
Packaging
Shipping
MMBT2222AT-7
SOT-523
3000/Tape & Reel
(Note 4)
Ordering Information
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
Date Code Key
1P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
1PYM
Marking Information
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W
相關PDF資料
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相關代理商/技術參數(shù)
參數(shù)描述
MMBT2222AT-7 功能描述:兩極晶體管 - BJT 40V 150mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2222AT-7-F 功能描述:兩極晶體管 - BJT 40V 150mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2222ATB 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:NPN GENERAL PURPOSE SWITCHING TRANSISTOR
MMBT2222A-TP 功能描述:兩極晶體管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2222ATR 制造商:All American Misc. 功能描述:
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