- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379321 > MJE18006 (ON SEMICONDUCTOR) POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MJE18006 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 6 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 415K |
| 代理商： | MJE18006 |
1
Motorola Bipolar Power Transistor Device Data
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF18006 have an applications specific state–of–the–art die designed
for use in 220 V line–operated Switchmode Power supplies and electronic light
ballasts. These high voltage/high speed transistors offer the following:
Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Tight Parametric Distributions are Consistent Lot–to–Lot
MJF18006, Case 221D, is UL Recognized at 3500 VRMS: File #E69369
MAXIMUM RATINGS
— Peak(1)
ICM
15
Base Current — Continuous
4.0
8.0
Adc
(for 1 sec, R.H. < 30%,
TC = 25 C)
IB
—
—
Test No. 1 Per Fig. 22b
Test No. 1 Per Fig. 22c
3500
1500
Rating
Thermal Resistance — Junction to Case
Symbol
R
θ
JA
MJE18006
1.25
MJF18006
3.125
Unit
C/W
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
Collector Cutoff Current
(VCE = 800 V, VEB = 0)
(TC = 125 C)
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
10%.
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Symbol
VCEO(sus)
ICEO
Min
450
Typ
—
Max
—
Unit
Vdc
μ
Adc
—
—
100
—
—
100
IEBO
—
—
100
μ
Adc
(continued)
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18006/D
POWER TRANSISTOR
6.0 AMPERES
1000 VOLTS
40 and 100 WATTS
*Motorola Preferred Device
CASE 221A–06
TO–220AB
MJE18006
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
REV 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE18006 | POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS |
| MJF18008 | POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS |
| MJF18008 | POWER TRANSISTOR |
| MJE18008 | POWER TRANSISTOR |
| MJE18008 | POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE18006G | 功能描述:兩極晶體管 - BJT BIP NPN 8A 450V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18008 | 功能描述:兩極晶體管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18008G | 功能描述:兩極晶體管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18009 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:POWER TRANSISTORS |
| MJE180G | 功能描述:兩極晶體管 - BJT 3A 40V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。