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參數(shù)資料
| 型號： | MJE18008 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS |
| 中文描述： | 8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 421K |
| 代理商： | MJE18008 |
1
Motorola Bipolar Power Transistor Device Data
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF18008 have an applications specific state–of–the–art die designed
for use in 220 V line–operated Switchmode Power supplies and electronic light
ballasts. These high voltage/high speed transistors offer the following:
Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Tight Parametric Distributions are Consistent Lot–to–Lot
— Peak(1)
ICM
16
Base Current — Continuous
4.0
Adc
(for 1 sec, R.H. < 30%,
IB
—
Test No. 1 Per Fig. 22b
3500
Operating and Storage Temperature
–65 to 150
Rating
Thermal Resistance — Junction to Case
Symbol
R
θ
JA
MJE18008
1.0
MJF18008
2.78
Unit
C/W
Characteristic
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
Collector Cutoff Current
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Symbol
Min
Typ
Max
Unit
VCEO(sus)
ICEO
ICES
450
—
—
—
—
—
—
—
—
100
100
100
Vdc
μ
Adc
μ
Adc
—
—
100
μ
Adc
(continued)
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
REV 1
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18008/D
POWER TRANSISTOR
8.0 AMPERES
1000 VOLTS
45 and 125 WATTS
*Motorola Preferred Device
CASE 221A–06
TO–220AB
MJE18008
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE18008G | 功能描述:兩極晶體管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18009 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:POWER TRANSISTORS |
| MJE180G | 功能描述:兩極晶體管 - BJT 3A 40V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE180PWD | 功能描述:TRANSISTOR NPN 40V 3A RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| MJE180STU | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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