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參數(shù)資料
| 型號： | MJF18009 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS |
| 中文描述： | 10 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 433K |
| 代理商： | MJF18009 |
1
Motorola Bipolar Power Transistor Device Data
!
The MJE/MJF18009 has an application specific state–of–the–art die designed for
use in 220 V line–operated Switchmode Power supplies and electronic ballast (“l(fā)ight
ballast”). These high voltage/high speed transistors exhibit the following main
features:
Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Full Characterization at 125 C
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
Two Package Choices: Standard TO–220 or Isolated TO–220
MAXIMUM RATINGS
Rating
Collector–Emitter Sustaining Voltage
Symbol
VCEO
VCES
VCBO
VEBO
MJE18009
450
MJF18009
Unit
Vdc
Collector–Emitter Breakdown Voltage
1000
Vdc
Collector–Base Breakdown Voltage
1000
Vdc
Emitter–Base Voltage
Vdc
Collector Current — Continuous
10
9
Adc
— Peak (1)
IC
*Derate above 25 C
1.2
8
W/ C
Operating and Storage Temperature
TJ, Tstg
VISOL1
–65 to 150
0.4
RMS Isolation Voltage (2)
C
Per Figure 22
4500
V
— Junction to Ambient
R
θ
JA
62.5
62.5
Maximum Lead Temperature for Soldering
260
(2) Proper strike and creepage distance must be provided.
TL
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18009/D
POWER TRANSISTORS
10 AMPERES
1000 VOLTS
50 and 150 WATTS
CASE 221A–06
TO–220AB
CASE 221D–02
TO–220 FULLPACK
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| MJF2955 | 功能描述:兩極晶體管 - BJT 10A 90V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJF2955G | 功能描述:兩極晶體管 - BJT 10A 90V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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