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| 型號： | MJF18204 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTORS |
| 中文描述： | 5 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ISOLATED TO-220, 3 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 484K |
| 代理商： | MJF18204 |
1
Motorola Bipolar Power Transistor Device Data
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The MJE/MJF18204 have an application specific state–of–the–art die dedicated to
the electronic ballast (“l(fā)ight ballast”) and power supply applications.
Improved Global Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Fast Turn–Off (No Current Tail)
Full Characterization at 125 C
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
— Peak (1)
ICM
10
Base Current — Continuous
Adc
TC = 25
°
C
*Total Device Dissipation @ TC = 25
°
C
VISOL3
IB
2
Per Figure 24
PD
75
1500
35
Watt
θ
JC
Purposes: 1/8
″
from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18204/D
POWER TRANSISTORS
5 AMPERES
1200 VOLTS
35 and 75 WATTS
CASE 221A–06
TO–220AB
CASE 221D–02
TO–220 FULLPACK
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE18204 | POWER TRANSISTORS |
| MJE18204 | POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS |
| MJF18206 | POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS |
| MJF18206 | POWER TRANSISTORS |
| MJE18206 | POWER TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJF18206 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:POWER TRANSISTORS |
| MJF2955 | 功能描述:兩極晶體管 - BJT 10A 90V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJF2955G | 功能描述:兩極晶體管 - BJT 10A 90V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJF3055 | 功能描述:兩極晶體管 - BJT 10A 90V 30W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJF3055_08 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Power Transistors |
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