參數(shù)資料
型號: MJE18206
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: POWER TRANSISTORS
中文描述: 8 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁數(shù): 1/12頁
文件大小: 504K
代理商: MJE18206
1
Motorola Bipolar Power Transistor Device Data
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The MJE/MJF18206 have an application specific state–of–the–art die dedicated to
the electronic ballast (“l(fā)ight ballast”) and power supply applications.
Improved Global Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for fast Turn–Off (No Current Tail)
Full Characterization at 125 C
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
— Peak (1)
ICM
16
Base Current — Continuous
Adc
TC = 25
°
C
*Total Device Dissipation @ TC = 25
°
C
VISOL3
IB
5
Per Figure 24
PD
100
1500
40
Watt
θ
JC
Purposes: 1/8
from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18206/D
POWER TRANSISTORS
8 AMPERES
1200 VOLTS
40 and 100 WATTS
CASE 221A–06
TO–220AB
CASE 221D–02
TO–220 FULLPACK
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MJE18206 POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS
MJF2955 COMPLEMENTARY SILICON POWER TRANSISTORS 10 AMPERES 90 VOLTS 30 WATTS
MJF2955 COMPLEMENTARY SILICON POWER TRANSISTORS
MJF3055 COMPLEMENTARY SILICON POWER TRANSISTORS
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