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參數(shù)資料
| 型號： | MJF2955 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS 10 AMPERES 90 VOLTS 30 WATTS |
| 中文描述： | 10 A, 90 V, PNP, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 156K |
| 代理商： | MJF2955 |
1
Motorola Bipolar Power Transistor Device Data
. . . specifically designed for general purpose amplifier and switching applications.
Isolated Overmold Package (1500 Volts RMS Min)
Electrically Similar to the Popular MJE3055T and MJE2955T
Collector–Emitter Sustaining Voltage — VCEO(sus) 90 Volts
10 Amperes Rated Collector Current
No Isolating Washers Required
Reduced System Cost
UL Recognized, File #E69369, to 3500 VRMS Isolation
(for 1 sec, R.H. < 30%,
3500
Test No. 2 Per Fig. 5
Derate above 25 C
0.016
W/ C
Operating and Storage Temperature Range
TJ, Tstg
–55 to +150
C
Characteristic
Thermal Resistance — Junction to Case (2)
Symbol
R
R
Max
4
Unit
C/W
Thermal Resistance — Junction to Ambient
62.5
C/W
Lead Temperature for Soldering Purposes
260
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
(2)
heatsink with thermal grease and a mounting torque of
≥
6 in. lbs.
(3) Proper strike and creepage distance must be provided.
10%.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJF3055/D
COMPLEMENTARY
SILICON
POWER TRANSISTORS
10 AMPERES
90 VOLTS
30 WATTS
TO–220 TYPE
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相關代理商/技術參數(shù) |
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| MJF2955G | 功能描述:兩極晶體管 - BJT 10A 90V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJF3055 | 功能描述:兩極晶體管 - BJT 10A 90V 30W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJF3055_08 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Power Transistors |
| MJF3055G | 功能描述:兩極晶體管 - BJT 10A 90V 30W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJF3055G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 90V TO-220 |
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