參數(shù)資料
型號(hào): MJF3055
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: COMPLEMENTARY SILICON POWER TRANSISTORS
中文描述: 10 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: PLASTIC, CASE 221D-03, TO-220, FULL PACK-3
文件頁數(shù): 1/4頁
文件大小: 156K
代理商: MJF3055
1
Motorola Bipolar Power Transistor Device Data
. . . specifically designed for general purpose amplifier and switching applications.
Isolated Overmold Package (1500 Volts RMS Min)
Electrically Similar to the Popular MJE3055T and MJE2955T
Collector–Emitter Sustaining Voltage — VCEO(sus) 90 Volts
10 Amperes Rated Collector Current
No Isolating Washers Required
Reduced System Cost
UL Recognized, File #E69369, to 3500 VRMS Isolation
(for 1 sec, R.H. < 30%,
3500
Test No. 2 Per Fig. 5
Derate above 25 C
0.016
W/ C
Operating and Storage Temperature Range
TJ, Tstg
–55 to +150
C
Characteristic
Thermal Resistance — Junction to Case (2)
Symbol
R
R
Max
4
Unit
C/W
Thermal Resistance — Junction to Ambient
62.5
C/W
Lead Temperature for Soldering Purposes
260
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
(2)
heatsink with thermal grease and a mounting torque of
6 in. lbs.
(3) Proper strike and creepage distance must be provided.
10%.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJF3055/D
COMPLEMENTARY
SILICON
POWER TRANSISTORS
10 AMPERES
90 VOLTS
30 WATTS
TO–220 TYPE
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