- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379322 > MMBFU310LT1 (ON SEMICONDUCTOR) JFET Transistor PDF資料下載
參數(shù)資料
| 型號： | MMBFU310LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | JFET Transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 161K |
| 代理商： | MMBFU310LT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
N–Channel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS
VGS
IG
25
Vdc
Gate–Source Voltage
25
Vdc
Gate Current
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
556
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
MMBFU310LT1 = 6C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = –1.0
μ
Adc, VDS = 0)
Gate 1 Leakage Current (VGS = –15 Vdc, VDS = 0)
Gate 2 Leakage Current (VGS = –15 Vdc, VDS = 0, TA = 125
°
C)
Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc)
ON CHARACTERISTICS
V(BR)GSS
IG1SS
IG2SS
VGS(off)
–25
—
Vdc
—
–150
pA
—
–150
nAdc
–2.5
–6.0
Vdc
Zero–Gate–Voltage Drain Current (VDS = 10 Vdc, VGS = 0)
Gate–Source Forward Voltage (IG = 10 mAdc, VDS = 0)
SMALL–SIGNAL CHARACTERISTICS
IDSS
VGS(f)
24
60
mAdc
—
1.0
Vdc
Forward Transfer Admittance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
|Yfs|
10
18
mmhos
Output Admittance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
|yos|
—
250
μ
mhos
Input Capacitance
(VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Ciss
—
5.0
pF
Reverse Transfer Capacitance
(VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Crss
—
2.5
pF
1. FR–5 = 1.0
0.75
0.062 in.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBFU310LT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
1
2
3
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
2 SOURCE
3
GATE
1 DRAIN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBR5179LT1 | RF AMPLIFIER TRANSISTOR NPN SILICON |
| MMBR5179 | RF AMPLIFIER TRANSISTOR |
| MMBTH69LT1 | UHF/VHF Transistor |
| MMDF3P03HD | DUAL TMOS POWER MOSFET 30 VOLTS |
| MMQA20VT1 | SC-59 QUAD TRANSIENT VOLTAGE SUPPRESSOR 5.6 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBFU310LT1_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:JFET Transistor N-Channel |
| MMBFU310LT1G | 功能描述:JFET 25V 10mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBFU310LT1G | 制造商:ON Semiconductor 功能描述:RF JFET |
| MMBFV170LT1G | 制造商:ON Semiconductor 功能描述: 制造商:ON Semiconductor 功能描述:NFET SOT23 60V 500MA 5R |
| MMBFV170LT3G | 制造商:ON Semiconductor 功能描述:NFET SOT23 60V 500MA 5R - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。