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參數(shù)資料
| 型號： | MMBR5179 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | RF AMPLIFIER TRANSISTOR |
| 中文描述： | 射頻放大器晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 47K |
| 代理商： | MMBR5179 |
1
MMBR5179LT1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
!
Designed for small–signal amplification at frequencies to 500 MHz.
Specifically packaged for use in thick and thin–film circuits using surface mount
components.
High Gain — Gpe = 15 dB Typ @ f = 200 MHz
Low Noise — NF = 4.5 dB Typ @ f = 200 MHz
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
TJmax
PD(max)
15
Vdc
Collector–Base Voltage
30
Vdc
Emitter–Base Voltage
3.0
Vdc
Collector Current — Continuous
50
mAdc
°
C
W
mW/
°
C
Maximum Junction Temperature
Power Dissipation, Tcase = 75
°
C (1)
Derate linearly above Tcase = 75
°
C @
THERMAL CHARACTERISTICS
150
0.375
5.00
Characteristic
Symbol
Max
Unit
Storage Temperature
Tstg
R
θ
JC
–55 to +150
°
C
Thermal Resistance Junction to Case
200
°
C/W
DEVICE MARKING
MMBR5179LT1 = 7H
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 0.001 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0)
Collector Cutoff Current (VCB = 15 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
15
—
—
Vdc
30
—
—
Vdc
3.0
—
—
Vdc
—
—
0.02
μ
Adc
DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc)
Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc)
Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
30
—
250
—
VCE(sat)
VBE(sat)
—
—
0.4
Vdc
—
—
1.0
Vdc
Current–Gain — Bandwidth Product
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz)
Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz)
50 ohm Noise Figure (IC = 1.5 mAdc, VCE = 6.0 Vdc, RS = 50
,
f = 200 MHz)
fT
—
1,400
—
MHz
Ccb
NF
—
—
1.0
pF
—
4.5
—
dB
Common–Emitter Amplifier Power Gain
(VCE = 6.0 Vdc, IC = 5.0 mAdc, f = 200 MHz)
NOTE:
1.Case temperature measured on collector lead immediately adjacent to body of package.
Gpe
—
15
—
dB
Order this document
by MMBR5179LT1/D
SEMICONDUCTOR TECHNICAL DATA
RF AMPLIFIER
TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
REV 8
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