參數(shù)資料
型號(hào): MJE18006
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: POWER TRANSISTOR
中文描述: 6 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 415K
代理商: MJE18006
3
Motorola Bipolar Power Transistor Device Data
hF
IC, COLLECTOR CURRENT (AMPS)
TJ = 125
°
C
TJ = 25
°
C
C
0.01
100
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
hF
Figure 2. DC Current Gain @ 5 Volts
V
Figure 3. Collector Saturation Region
Figure 4. Collector–Emitter Saturation Voltage
Figure 5. Base–Emitter Saturation Region
Figure 6. Capacitance
10
1
1
10
100
10
1
0.01
0.1
1
10
2
0.01
IB, BASE CURRENT (AMPS)
10
1
0.01
0.01
IC COLLECTOR CURRENT (AMPS)
0.1
1.3
1
0.8
0.4
0.01
IC, COLLECTOR CURRENT (AMPS)
0.1
1
10
1000
100
1
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1
1000
1
0
0.1
1
10
10000
10
0.1
0.1
1
10
10
TJ = – 20
°
C
VCE = 1 V
TJ = 125
°
C
TJ = 25
°
C
TJ = – 20
°
C
VCE = 5 V
V
IC/IB = 10
IC/IB = 5
V
1.1
0.9
0.6
0.5
0.5
1.5
1.2
TJ = 25
°
C
IC = 1 A
3 A
5 A
6 A
TJ = 25
°
C
TJ = 125
°
C
TJ = 25
°
C
TJ = 125
°
C
IC/IB = 5
IC/IB = 10
2 A
100
0.7
Cib
Cob
TYPICAL STATIC CHARACTERISTICS
TJ = 25
°
C
f = 1 MHz
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