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參數(shù)資料
| 型號： | MJD32CT4 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
| 封裝： | TO-252, DPAK-3 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 265K |
| 代理商： | MJD32CT4 |
MJD32C
Doc ID 13673 Rev 3
9/9
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD32TF | 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| MJD32I | 3 A, 40 V, PNP, Si, POWER TRANSISTOR |
| MJD340-I | 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR |
| MJD340I | 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR |
| MJD350-1 | 0.5 A, 300 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD32CT4 | 制造商:STMicroelectronics 功能描述:BIPOLAR TRANSISTOR PNP -100V TO-252 制造商:STMicroelectronics 功能描述:BIPOLAR TRANSISTOR, PNP, -100V, TO-252 |
| MJD32CT4-A | 功能描述:兩極晶體管 - BJT LO PWR PNP PW TRANS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD32CT4G | 功能描述:兩極晶體管 - BJT 3A 100V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD32CT4G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJD32CTF | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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