- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95943 > MIMD10A-13 (DIODES INC) 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | MIMD10A-13 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 83K |
| 代理商： | MIMD10A-13 |
DS30381 Rev. 5 - 2
2 of 3
MIMD10A
www.diodes.com
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
Vl(off)
-0.3
V
VCC = -5V, IO = -100
mA
Vl(on)
-1.5
VO = 0.3, IO = -100mA
Output Voltage
VO(on)
-0.1
-0.3
V
IO = -100mA/-5mA
Input Current
Il
-25
mA
VI = -2V
Output Current
IO(off)
-0.5
mA
VCC = -50V, VI = 0V
DC Current Gain
Gl
68
Gain-Bandwidth Product*
fT
200
MHz
VCE = -10V, IE = -50mA,
f = 100MHz
Electrical Characteristics PNP Section Tr1 @ TA = 25°C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
* Transistor - For Reference Only
Electrical Characteristics NPN Section Tr2 @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
50
V
IC = 50
mA
Collector-Emitter Breakdown Voltage
BVCEO
50
V
IC = 1mA
Emitter-Base Breakdown Voltage
BVEBO
5
V
IE = 50
mA
Collector Cutoff Current
ICBO
0.5
mA
VCB = 50V
Emitter Cutoff Current
IEBO
0.5
mA
VEB = 4V
Collector-Emitter Saturation Voltage
VCE(sat)
0.3
V
IC/IB = 10mA / 1.0mA
DC Current Transfer Ratio
hFE
100
250
600
IC = 1mA, VCE = 5V
Gain-Bandwidth Product*
fT
250
MHz
VCE = 10V, IE = -5mA, f = 100MHz
* Transistor - For Reference Only
Date Code Key
C73 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
C73
YM
Marking Information
Device
Packaging
Shipping
MIMD10A-7
SOT-363
3000/Tape & Reel
Ordering Information (Note 3)
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
Year
2003
2004
2005
2006
2007
2008
2009
2010
2011
Code
PR
S
T
U
VW
X
Y
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MIMD10-A-7-F.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MIXA10W1200TMH | 17 A, 1200 V, N-CHANNEL IGBT |
| MIXA10WB1200TML | 17 A, 1200 V, N-CHANNEL IGBT |
| MIXA20WB1200TED | 28 A, 1200 V, N-CHANNEL IGBT |
| MIXA30W1200TED | 43 A, 1200 V, N-CHANNEL IGBT |
| MIXA30WB1200TED | 43 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIMD10A-7 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 PREBIASED COMP. RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MIMD10A-7-F | 功能描述:開關(guān)晶體管 - 偏壓電阻器 PREBIASED COMP. RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MIME 003 | 功能描述:MEARM PI 制造商:pimoroni ltd 系列:- 零件狀態(tài):在售 配置:支臂 使用的 IC/零件:- Interconnect System:- Suggested Programming Environment:- Included MCU/MPU Board（s）:- 內(nèi)容:底盤，五金件，伺服 標(biāo)準(zhǔn)包裝:1 |
| MI-MEGAMOD | 制造商:VICOR 制造商全稱:Vicor Corporation 功能描述:Military Chassis Mount DC-DC Converters 10 to 300W Single, Dual, Triple Outputs |
| MIMH | 制造商:MMD 制造商全稱:MMD Components 功能描述:5 x 7 Ceramic Oscillator |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。