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參數(shù)資料
| 型號： | MHV5IC1810NR2 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifier |
| 中文描述： | 射頻LDMOS寬帶集成功率放大器 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 401K |
| 代理商： | MHV5IC1810NR2 |
MHV5IC1810NR2
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifier
The MHV5IC1810N wideband integrated circuit is designed with on-chip
matching that makes it usable from 1805 to 1990 MHz. This multi-stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
Typical Two-Tone Performance: V
DD
= 28 Volts, I
DQ1
= 120 mA, I
DQ2
=
90 mA, P
out
= 5 Watts Avg., Full Frequency Band (1805-1880 MHz or
1930-1990 MHz)
Power Gain — 29 dB
Power Added Efficiency — 29%
IMD — -34 dBc
Driver Application
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ1
= 105 mA, I
DQ2
=
95 mA, P
out
= 35 dBm, Full Frequency Band (1805-1880 MHz or
1930-1990 MHz)
Power Gain — 29 dB
Spectral Regrowth @ 400 kHz Offset = -67 dBc
Spectral Regrowth @ 600 kHz Offset = -76 dBc
EVM — 1.1% rms
Capable of Handling 3:1 VSWR, @ 28 Vdc, 1990 MHz, 10 Watts CW
Output Power
Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 W CW
P
out
.
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source Scattering Parameters
On-Chip Matching (50 Ohm Input, >5 Ohm Output)
Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
On-Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. R2 Suffix = 1500 Units per 16 mm, 13 inch Reel.
16
15
14
13
12
11
10
1
2
3
4
5
6
7
8
(Top View)
9
NC
V
DS1
GND
V
GS1
V
GS2
NC
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
NC
V
GS1
RF
in
V
DS1
V
GS2
RF
in
V
DS2
/RF
out
2 Stage IC
Quiescent Current
Temperature Compensation
V
RD1
V
RG1
V
RD1
V
RG1
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
Document Number: MHV5IC1810N
Rev. 0, 5/2006
Freescale Semiconductor
Technical Data
MHV5IC1810NR2
1805-1990 MHz, 5 W AVG., 28 V
GSM/GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
CASE 978-03
PFP-16
PLASTIC
16
1
Freescale Semiconductor, Inc., 2006. All rights reserved.
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| MHV5IC2215NR2 | 功能描述:射頻放大器 2.1GHZ IPA PFP16N RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MHV5IC2215NR2_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifier |
| MHVIC2114NR2 | 功能描述:射頻放大器 2.2GHZ IPA PFP-16N RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MHVIC2114R2 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifier |
| MHVIC2115NR2 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifier |
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