參數(shù)資料
型號: MG300Q2YS61
元件分類: IGBT 晶體管
英文描述: 300 A, 1200 V, N-CHANNEL IGBT
封裝: 2-109C4A, 7 PIN
文件頁數(shù): 5/8頁
文件大?。?/td> 0K
代理商: MG300Q2YS61
MG300Q2YS61
2002-08-29
5
Sw
itc
hin
gtim
e
(n
s)
Sw
itc
hin
g
lo
ss
(
m
J)
Forward voltage VF (V)
IF – VF
Fo
rw
ar
dc
ur
ren
t
I F
(A
)
Gate
-em
itt
er
volt
age
V
GE
(V
)
Charge QG (nC)
VCE, VGE – QG
Co
lle
ct
or
-e
m
itte
r
vo
lta
ge
V
CE
(V
)
Gate resistance RG ()
Switching time – RG
Sw
itc
hin
gtim
e
(n
s)
Gate resistance RG ()
Switching loss – RG
Collector current IC (A)
Switching time – IC
Collector current IC (A)
Switching loss – IC
Sw
itc
hin
g
lo
ss
(
m
J)
0
10
100
1000
2
4
6
8
10
12
14
16
VCC = 600 V
IC = 300 A
VGE = ±15 V
Ls
= 80 nH
: Tj = 25°C
: Tj = 125°C
0
10
4
6
8
10
12
14
16
2
100
10000
1000
VCC = 600 V
IC = 300 A
VGE = ±15 V
Ls
= 80 nH
: Tj = 25°C
: Tj = 125°C
600
500
400
300
200
100
0
1
2
3
4
5
Common cathode
VGE = 0
125
Tj = 25°C
40
tf
td (on)
td (off)
tr
toff
ton
Eon
Eoff
10
1000
10000
100
0
50
100
150
200
250
300
VCC = 600 V, RG = 2.7
VGE = ±15 V, Ls = 80 nH
: Tj = 25°C
: Tj = 125°C
tr
tf
td (off)
toff
ton
td (on)
1
0
50
100
150
200
250
300
100
10
VCC = 600 V
RG = 2.7
VGE = ±15 V
Ls
= 80 nH
: Tj = 25°C
: Tj = 125°C
Eoff
Eon
1000
0
800
600
400
200
0
500
1000
1500
2000
2500
4
8
12
16
20
Common emitter
RL = 2
Tj = 25°C
VCE = 0 V
600
200
400
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