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參數(shù)資料
| 型號： | MG300Q2YS61 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 300 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | 2-109C4A, 7 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MG300Q2YS61 |
MG300Q2YS61
2002-08-29
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20 V, VCE = 0 V
±500
nA
Collector cut-off current
ICES
VCE = 1200 V, VGE = 0 V
1
mA
Gate-emitter cut-off voltage
VGE (off)
IC = 300 mA, VCE = 5V
6.0
7.0
8.0
V
Tc
= 25°C
2.1
2.6
Collector-emitter saturation voltage
VCE (sat)
IC = 300 A,
VGE = 15 V
Tc
= 125°C
2.7
3.2
V
Input capacitance
Cies
VCE = 10 V, VGE = 0 V, f = 1 MHz
25000
pF
Turn-on delay time
td (on)
0.3
Rise time
tr
0.2
Turn-on time
ton
0.5
Turn-off delay time
td (off)
0.5
Fall time
tf
0.1
0.3
Switching time
Turn-off time
toff
Inductive load
VCC = 600 V
IC = 300 A
VGE = ±15 V
RG = 2.7
(Note 1)
0.6
s
Tc
= 25°C
2.4
2.8
Forward voltage
VF
IF = 300 A, VGE = 0 V
Tc
= 125°C
2.2
V
Reverse recovery time
trr
IF = 300 A, VGE = 15 V,
di/dt = 1500 A/
s
0.2
s
Transistor stage
0.045
Thermal resistance
Rth (j-c)
Diode stage
0.100
°C/W
Note 1: Switching time and reverse recovery time test circuit and timing chart
IF
90% Irr
50% Irr
IF
Irr
trr
IC
RG
L
IF
VGE
VCC
VCE
VGE
IC
0
90%
10%
90%
td (off)
toff
tf
tr
td (on)
ton
10%
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