參數(shù)資料
型號(hào): MG200J6ES60
元件分類(lèi): IGBT 晶體管
英文描述: 200 A, 600 V, N-CHANNEL IGBT
封裝: 2-123B1A, 17 PIN
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 0K
代理商: MG200J6ES60
MG200J6ES60
2004-02-17
3
Maximum Ratings (Ta
= 25°C)
Stage
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±20
V
DC
IC
200
Collector current
1 ms
ICP
400
A
DC
IF
200
Forward current
1 ms
IFM
400
A
Inverter
Collector power dissipation (Tc
= 25°C)
PC
1000
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40~125
°C
Isolation voltage
Visol
2500 (AC 1 min)
V
Module
Screw torque
3 (M5)
Nm
Electrical Characteristics (Tj = 25°C)
1.
Inverter stage
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20 V, VCE = 0
±500
nA
Collector cut-off current
ICES
VCE = 600 V, VGE = 0
1.0
mA
Gate-emitter cut-off voltage
VGE (off)
VCE = 5 V, IC = 200 mA
5.0
6.5
8.0
V
Tj = 25°C
1.6
2.2
Collector-emitter saturation voltage
VCE (sat)
VGE = 15 V,
IC = 200 A
Tj = 125°C
2.2
V
Input capacitance
Cies
VCE = 10 V, VGE = 0, f = 1 MHz
33000
pF
Turn-on delay time
td (on)
1.00
Turn-off time
toff
1.20
Switching time
Fall time
tf
0.50
Reverse recovery time
trr
VCC = 300 V, IC = 200 A
VGE = ±15 V, RG = 10
(Note 1)
0.30
s
Forward voltage
VF
IF = 200 A
1.7
2.3
V
Note 1: Switching time test circuit & timing chart
2.
Module (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Zero-power resistance
R25
ITM
= 0.2 mA
100
k
B value
B25/85
Tc
= 25°C/Tc = 85°C
4390
K
Inverter IGBT stage
0.125
Junction to case thermal resistance
Rth (j-c)
Inverter FRD stage
0.195
°C/W
Case to fin thermal resistance
Rth (c-f)
0.05
°C/W
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