參數(shù)資料
型號(hào)： MCV18ET-I/SO
元件分類： 微控制器/微處理器
英文描述： FLASH, 20 MHz, RISC MICROCONTROLLER, PDSO18
封裝： 7.50 MM, LEAD FREE, SOIC-18
文件頁(yè)數(shù)： 89/108頁(yè)
文件大小： 1509K
代理商： MCV18ET-I/SO
2009 Microchip Technology Inc.
DS41399A-page 81
MCV18E
10.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings(
)
Ambient temperature under bias........................................................................................................... .-40°C to +85°C
Storage temperature ........................................................................................................................... -65°C to +150°C
Voltage on any pin with respect to VSS (except VDD, MCLR, and RA4) ....................................... -0.3V to (VDD +0.3V)
Voltage on VDD with respect to VSS ...................................................................................................... -0.3V to +7.5V
Voltage on MCLR with respect to VSS (Note 2) ...................................................................................... 0V to +13.25V
Voltage on RA4 with respect to Vss ............................................................................................................ 0V to +8.5V
Total power dissipation (Note 1) (PDIP and SOIC) ................................................................................................ 1.0W
Maximum current out of VSS pin ........................................................................................................................ 300 mA
Maximum current into VDD pin ........................................................................................................................... 250 mA
Input clamp current, IIK (VI < 0 or VI > VDD)
...................................................................................................................±20 mA
Output clamp current, IOK (VO < 0 or VO > VDD)
...........................................................................................................±20 mA
Maximum output current sunk by any I/O pin....................................................................................................... 25 mA
Maximum output current sourced by any I/O pin ................................................................................................. 25 mA
Maximum current sunk by PORTA and PORTB (combined).............................................................................. 200 mA
Maximum current sourced by PORTA and PORTB (combined) ........................................................................ 200mA
Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD -
∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)
2: Voltage spikes below VSS at the MCLR/VPP pin, inducing currents greater than 80 mA, may cause latch-up.
Thus, a series resistor of 50-100
Ω should be used when applying a “l(fā)ow” level to the MCLR/VPP pin rather
than pulling this pin directly to VSS.
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
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