參數(shù)資料
型號： MCHC11F1CFNE5
廠商： Freescale Semiconductor
文件頁數(shù)： 108/158頁
文件大小： 0K
描述： MCU 8BIT 1KRAM 512EE 68-PLCC
標準包裝： 18
系列： HC11
核心處理器： HC11
芯體尺寸： 8-位
速度： 5MHz
連通性： SCI，SPI
外圍設備： POR，WDT
輸入/輸出數(shù)： 30
程序存儲器類型： ROMless
EEPROM 大小： 512 x 8
RAM 容量： 1K x 8
電壓 - 電源 (Vcc/Vdd)： 4.75 V ~ 5.25 V
數(shù)據轉換器： A/D 8x8b
振蕩器型： 內部
工作溫度： -40°C ~ 85°C
封裝/外殼： 68-LCC（J 形引線）
包裝： 管件
OPERATING MODES AND ON-CHIP MEMORY
TECHNICAL DATA
4-15
Recall that zeros must be erased by a separate erase operation before programming.
The following example of how to program an EEPROM byte assumes that the appro-
priate bits in BPROT have been cleared and the data to be programmed is present in
accumulator A.
4.4.1.2 EEPROM Bulk Erase
To erase the EEPROM, ensure that the proper bits of the BPROT register are cleared,
then complete the following steps using the PPROG register:
1. Write to PPROG with the ERASE, EELAT, and appropriate BYTE and ROW
bits set.
2. Write to the appropriate EEPROM address with any data. Row erase only re-
quires a write to any location in the row. Bulk erase is accomplished by writing
to any location in the array.
3. Write to PPROG with ERASE, EELAT, EEPGM, and the appropriate BYTE and
ROW bits set.
4. Delay for 10 ms or more, as appropriate.
5. Clear the EEPGM bit in PPROG to turn off the high voltage.
6. Return to step 1 for next byte or row or proceed to step 7.
7. Clear the PPROG register to reconfigure the EEPROM address and data buses
for normal operation.
The following is an example of how to bulk erase the 512-byte EEPROM. The CONFIG
register is not affected in this example. When bulk erasing the CONFIG register, CON-
FIG and the 512-byte array are all erased.
4.4.1.3 EEPROM Row Erase
The following example shows how to perform a fast erase of large sections of EE-
PROM and assumes that index register X contains the address of a location in the de-
sired row.
PROG
LDAB
#$02
EELAT=1, EEPGM=0
STAB
$103B
Set EELAT bit
STAA
$FE00
Store data to EEPROM address
LDAB
#$03
EELAT=1, EEPGM=1
STAB
$103B
Turn on programming voltage
JSR
DLY10
Delay 10 ms
CLR
$103B
Turn off high voltage and set to READ mode
BULKE
LDAB
#$06
ERASE=1, EELAT=1, EEPGM=0
STAB
$103B
Set EELAT bit
STAB
$FE00
Store any data to any EEPROM address
LDAB
#$07
EELAT=1, EEPGM=1
STAB
$103B
Turn on programming voltage
JSR
DLY10
Delay 10 ms
CLR
$103B
Turn off high voltage and set to READ mode
F
re
e
sc
a
le
S
e
m
ic
o
n
d
u
c
to
r,
I
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
c
..
.
相關PDF資料
PDF描述
MCHC908JW32FC IC MCU 32K FLASH 8MHZ 48-QFN
MCHC908MR8MFAE IC MCU 8K FLASH 8MHZ PWM 32-LQFP
MCHRC705J1ACDWE MCU 8BIT 64B RAM 20-SOIC
MCIMX233CAG4C MPU 32BIT I.MX233 IND 128LQFP
MCIMX233DJM4B MPU 32BIT I.MX233 169MAPBGA
相關代理商/技術參數(shù)
參數(shù)描述
MCHC11F1MFNE4 制造商:Freescale Semiconductor 功能描述:8-BIT MCU,1KRAM,512EE,A/ - Rail/Tube
MCHC11F1VFNE3 功能描述:8位微控制器 -MCU 8B MCU 1KRAM 512EE RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據 RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
MCHC11KS1CFNE4 功能描述:8位微控制器 -MCU 68HC11KS4 RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據 RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
MCHC175AFR1 制造商:Rochester Electronics LLC 功能描述:- Bulk
MCHC40-330K-RC 制造商:ALLIED 制造商全稱:Allied Components International 功能描述:Molded Chip Inductor High Current
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*