During operation, " />
參數(shù)資料
型號(hào): MC8640DTVU1000HE
廠商: Freescale Semiconductor
文件頁(yè)數(shù): 17/130頁(yè)
文件大?。?/td> 0K
描述: IC MPU DUAL CORE E600 1023FCCBGA
標(biāo)準(zhǔn)包裝: 1
系列: MPC86xx
處理器類型: 32-位 MPC86xx PowerPC
速度: 1.0GHz
電壓: 1.05V
安裝類型: 表面貼裝
封裝/外殼: 1023-BCBGA,F(xiàn)CCBGA
供應(yīng)商設(shè)備封裝: 1023-FCCBGA(33x33)
包裝: 托盤
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)當(dāng)前第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)第126頁(yè)第127頁(yè)第128頁(yè)第129頁(yè)第130頁(yè)
MPC8640 and MPC8640D Integrated Host Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
113
Thermal
During operation, the die-junction temperatures (Tj) should be maintained less than the value specified in
Table 2. The temperature of air cooling the component greatly depends on the ambient inlet air temperature
and the air temperature rise within the electronic cabinet. An electronic cabinet inlet-air temperature (Ti)
may range from 30 to 40
°C. The air temperature rise within a cabinet (Tr) may be in the range of
5to 10
°C. The thermal resistance of the thermal interface material (Rθint) is typically about 0.2 °C/W. For
example, assuming a Ti of 30 °C, a Tr of 5 °C, a package RθJC = 0.1, and a typical power consumption (Pd)
of 43.4 W, the following expression for Tj is obtained:
Die-junction temperature:
Tj = 30 °C + 5 °C + (0.1 °C/W + 0.2 °C/W + θsa) × 43.4 W
For this example, a Rθsavalue of 1.32 °C/W or less is required to maintain the die junction temperature
below the maximum value of Table 2.
Though the die junction-to-ambient and the heat sink-to-ambient thermal resistances are a common
figure-of-merit used for comparing the thermal performance of various microelectronic packaging
technologies, one should exercise caution when only using this metric in determining thermal management
because no single parameter can adequately describe three-dimensional heat flow. The final die-junction
operating temperature is not only a function of the component-level thermal resistance, but the
system-level design and its operating conditions. In addition to the component's power consumption, a
number of factors affect the final operating die-junction temperature—airflow, board population (local
heat flux of adjacent components), heat sink efficiency, heat sink placement, next-level interconnect
technology, system air temperature rise, altitude, and so on.
Due to the complexity and variety of system-level boundary conditions for today's microelectronic
equipment, the combined effects of the heat transfer mechanisms (radiation, convection, and conduction)
may vary widely. For these reasons, we recommend using conjugate heat transfer models for the board as
well as system-level designs.
For system thermal modeling, the MPC8640 thermal model is shown in Figure 62. Four cuboids are used
to represent this device. The die is modeled as 12.4
× 15.3 mm at a thickness of 0.86 mm. See Section 3,
“Power Characteristics,for power dissipation details. The substrate is modeled as a single block
33
×33×1.2 mm with orthotropic conductivity: 13.5 W/(m K) in the xy-plane and 5.3 W/(m K) in the
z-direction. The die is centered on the substrate. The bump/underfill layer is modeled as a collapsed
thermal resistance between the die and substrate with a conductivity of 5.3 W/(m K) in the thickness
dimension of 0.07 mm. Because the bump/underfill is modeled with zero physical dimension (collapsed
height), the die thickness was slightly enlarged to provide the correct height. The C5 solder layer is
modeled as a cuboid with dimensions 33x33x0.4 mm and orthotropic thermal conductivity of 0.034 W/(m
K) in the xy-plane and 9.6 W/(m K) in the z-direction. An LGA solder layer would be modeled as a
collapsed thermal resistance with thermal conductivity of 9.6W/(m K) and an effective height of 0.1 mm.
相關(guān)PDF資料
PDF描述
FH40-60S-0.5SV CONN FPC/FFC 60POS .5MM VERT SMD
MC8640DTHX1000HE IC DUAL CORE PROCESSOR 1023-CBGA
MC7457RX1000NC IC MPU RISC 32BIT 483FCCBGA
IDT7025S30J IC SRAM 128KBIT 30NS 84PLCC
XC4020XL-3HT144C IC FPGA C-TEMP 3.3V 3SPD 144HQFP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC8640DTVU1000N 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Integrated Host Processor Hardware Specifications
MC8640DTVU1000NC 功能描述:微處理器 - MPU G8 REV2.1 0.95V -40/105C RoHS:否 制造商:Atmel 處理器系列:SAMA5D31 核心:ARM Cortex A5 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:536 MHz 程序存儲(chǔ)器大小:32 KB 數(shù)據(jù) RAM 大小:128 KB 接口類型:CAN, Ethernet, LIN, SPI,TWI, UART, USB 工作電源電壓:1.8 V to 3.3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-324
MC8640DTVU1067H 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Integrated Host Processor Hardware Specifications Addendum for the MC8640xTxxyyyyaC Series
MC8640DTVU1067N 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Integrated Host Processor Hardware Specifications
MC8640DTVU1067NC 功能描述:微處理器 - MPU G8,REV2.1,0.95V,-40 105C RoHS:否 制造商:Atmel 處理器系列:SAMA5D31 核心:ARM Cortex A5 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:536 MHz 程序存儲(chǔ)器大小:32 KB 數(shù)據(jù) RAM 大小:128 KB 接口類型:CAN, Ethernet, LIN, SPI,TWI, UART, USB 工作電源電壓:1.8 V to 3.3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-324