參數(shù)資料
型號(hào)： MB81V4400C-70
廠(chǎng)商： Fujitsu Limited
英文描述： CMOS 1M x 4 Bit Fast Page Mode Dynamic RAM(CMOS 1M x 4位快速頁(yè)模式動(dòng)態(tài)RAM)
中文描述： 100萬(wàn)的CMOS × 4位快速頁(yè)面模式動(dòng)態(tài)RAM的CMOS（100萬(wàn)× 4位快速頁(yè)模式動(dòng)態(tài)內(nèi)存）
文件頁(yè)數(shù)： 1/26頁(yè)
文件大小： 302K
代理商： MB81V4400C-70
1
DS05-10174-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS 1M
FAST PAGE MODE DYNAMIC RAM
×
4 BIT
MB81V4400C-60/-70
CMOS 1,048,576
×
4 BIT Fast Page Mode Dynamic RAM
I
DESCRIPTION
The Fujitsu MB81V4400C is a fully decoded CMOS Dynamic RAM (DRAM) that contains 4,194,304 memory
cells accessible in 4-bit increments. The MB81V4400C features a “fast page” mode of operation whereby high-
speed random access of up to 1,024
×
4-bits of data within the same row can be selected. The MB81V4400C
DRAM is ideally suited for mainframe, buffers, hand-held computers video imaging equipment, and other memory
applications where very low power dissipation and high bandwidth are basic requirements of the design. Since
the standby current of the MB81V4400C is very small, the device can be used as a non-volatile memory in
equipment that uses batteries for primary and/or auxiliary power.
The MB81V4400C is fabricated using silicon gate CMOS and Fujitsu’s advanced four-layer polysilicon process.
This process, coupled with advanced stacked capacitor memory cells, reduces the possibility of soft errors and
extends the time interval between memory refreshes. Clock timing requirements for the MB81V4400C are not
critical and all inputs are LVTTL compatible.
I
PRODUCT LINE & FEATURES
Parameter
MB81V4400C-60
60 ns max.
15 ns min.
30 ns max.
110 ns max.
40 ns min.
220 mW max.
7.2 mW max. (LVTTL level)/3.6 mW max. (CMOS level)
MB81V4400C-70
70 ns max.
20 ns min.
35 ns max.
125 ns max.
45 ns min.
195 mW max.
RAS Access Time
CAS Access Time
Address Access Time
Random Cycle Time
Fast Page Mode Cycle Time
Low power Dissipation
Operating current
Standby current
1,048,576 words
×
4 bit organization
Silicon gate, CMOS, 3D-Stacked Capacitor Cell
All input and output are LVTTL compatible
1024 refresh cycles every 16.4 ms
Self refresh function
Early write or OE controlled write capability
RAS-only, CAS-before-RAS, or Hidden Refresh
Fast page Mode, Read-Modify-Write Capability
On chip substrate bias generator for high
Performance
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
相關(guān)PDF資料
PDF描述
MB81V4405C-60 CMOS 1M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×4 位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM)
MB81V4405C-70 CMOS 1M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×4 位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM)
MB81V4800S-60 CMOS 512K×8 BIT Fast Page Mode DRAM(CMOS 512K×8位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB81V4800S-70 CMOS 512K×8 BIT Fast Page Mode DRAM(CMOS 512K×8位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB8431-12L 2K x 8 Bits CMOS Dual-Port Static Random Access
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MB82 功能描述:RECTIFIER BRIDGE 8A 200V BR-6 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 橋式整流器 系列:- 產(chǎn)品變化通告:Product Discontinuation 14/Mar/2011 標(biāo)準(zhǔn)包裝:1,500 系列:- 電壓 - 峰值反向(最大):1000V 電流 - DC 正向(If):1.5A 二極管類(lèi)型:單相 速度:標(biāo)準(zhǔn)恢復(fù) >500ns，> 200mA（Io） 反向恢復(fù)時(shí)間(trr):- 安裝類(lèi)型:表面貼裝 封裝/外殼:4-SMD 包裝:帶卷 (TR) 供應(yīng)商設(shè)備封裝:4-SDIP
MB820 功能描述:ACCY MOUNT BMM 3/4 58A RoHS:是 類(lèi)別:RF/IF 和 RFID >> RF配件 系列:* 標(biāo)準(zhǔn)包裝:1 系列:*
MB-8210 制造商:Maxxtro 功能描述:Bulk
MB82101BAN 制造商:MURATA 制造商全稱(chēng):Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS
MB82101BBN 制造商:MURATA 制造商全稱(chēng):Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*