參數(shù)資料
型號(hào)： MB814265-70
廠商： Fujitsu Limited
英文描述： CMOS 256K ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超級(jí)頁面存取模式動(dòng)態(tài)RAM)
中文描述： 的CMOS 256K × 16位的超頁模式動(dòng)態(tài)RAM的CMOS（256K × 16位超級(jí)頁面存取模式動(dòng)態(tài)內(nèi)存）
文件頁數(shù)： 10/28頁
文件大小： 364K
代理商： MB814265-70
10
MB814265-60/MB814265-70
I
AC CHARACTERISTICS (Continued)
(At recommended operating conditions unless otherwise noted.)
Notes 3, 4, 5
MB814265-70
Min.
30
Notes: 1. Referenced to V
SS
. To all V
CC
(V
SS
) pins, the same supply voltage should be applied.
2. I
CC
depends on the output load conditions and cycle rates; The specified values are obtained with the
output open.
I
CC
depends on the number of address change as RAS = V
IL
and UCAS = V
IH
, LCAS = V
IH
, V
IL
> –0.3 V.
I
CC1
, I
CC3
and I
CC5
are specified at one time of address change during RAS = V
IL
and UCAS = V
IH
, LCAS
= V
IH
.
I
CC4
is specified at one time of address change during one Page cycle.
3. An initial pause (RAS = CAS = V
IH
) of 200
μ
s is required after power-up followed by any eight RAS-
only cycles before proper device operation is achieved. In case of using internal refresh counter, a
minimum of eight CAS-before-RAS initialization cycles instead of 8 RAS cycles are required.
4. AC characteristics assume t
T
= 5 ns.
5. V
IH
(min) and V
IL
(max) are reference levels for measuring timing of input signals. Also transition times
are measured between V
IH
(min) and V
IL
(max).
6. Assumes that t
RCD
≤
t
RCD
(max), t
RAD
≤
t
RAD
(max). If t
RCD
is greater than the maximum recommended
value shown in this table, t
RAC
will be increased by the amount that t
RCD
exceeds the value shown. Refer
to Fig. 2 and 3.
7. If t
RCD
≥
t
RCD
(max), t
RAD
≥
t
RAD
(max), and t
ASC
≥
t
AA
– t
CAC
– t
T
, access time is t
CAC
.
8. If t
RAD
≥
t
RAD
(max) and t
ASC
≤
t
AA
– t
CAC
– t
T
, access time is t
AA
.
9. Measured with a load equivalent to two TTL loads and 100 pF.
10. t
OFF
and t
OEZ
are specified that output buffer change to high impedance state.
11. Operation within the t
RCD
(max) limit ensures that t
RAC
(max) can be met. t
RCD
(max) is specified as a
reference point only; if t
RCD
is greater than the specified t
RCD
(max) limit, access time is controlled
exclusively by t
CAC
or t
AA
.
12. t
RCD
(min) = t
RAH
(min) + 2t
T
+ t
ASC
(min).
13. Operation within the t
RAD
(max) limit ensures that t
RAC
(max) can be met. t
RAD
(max) is specified as a
reference point only; if t
RAD
is greater than the specified t
RAD
(max) limit, access time is controlled
exclusively by t
CAC
or t
AA
.
14. Either t
RRH
or t
RCH
must be satisfied for a read cycle.
15. t
WCS
is specified as a reference point only. If t
WCS
≥
t
WCS
(min) the data output pin will remain High-Z state
through entire cycle.
16. Assumes that t
WCS
< t
WCS
(min).
17. Either t
DZC
or t
DZO
must be satisfied.
18. t
CPA
is access time from the selection of a new column address (that is caused by changing both UCAS
and LCAS from “L” to “H”). Therefore, if t
CP
is long, t
CPA
is longer than t
CPA
(max).
19. Assumes that CAS-before-RAS refresh.
20. The last CAS rising edge.
21. The first CAS falling edge.
No.
Parameter
Notes
Symbol
MB814265-60
Min.
25
Unit
Max.
—
Max.
—
63
Hyper Page Mode Read/Write Cycle Time
Hyper Page Mode Read-Modify-Write Cycle
Time
t
HPC
ns
64
t
HPRWC
66
—
71
—
ns
65
Access Time from CAS Precharge
t
CPA
—
35
—
40
ns
66
Hyper Page Mode CAS Pulse Width
Hyper Page Mode RAS Hold Time from CAS
Precharge
Hyper Page Mode CAS Precharge to WE Delay
Time
t
CP
10
—
10
—
ns
67
t
RHCP
35
—
40
—
ns
68
t
CPWD
52
—
57
—
9, 18
相關(guān)PDF資料
PDF描述
MB814400A-60 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動(dòng)態(tài)RAM)
MB814400A-70 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動(dòng)態(tài)RAM)
MB814400A-80 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動(dòng)態(tài)RAM)
MB814400C-60 CMOS 1 M ×4BIT Fast Page Mode DRAM(CMOS 1 M ×4 位快速頁面存取模式動(dòng)態(tài)RAM)
MB814400C-70 CMOS 1 M ×4 BIT Fast Page Mode DRAM(CMOS 1 M ×4 位快速頁面存取模式動(dòng)態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MB814400C-70PJN 制造商:FUJITSU 功能描述:Dynamic RAM, Fast Page, 1M x 4, 26 Pin, Plastic, SOJ
MB814405D-60PJN 制造商:FUJITSU Component Ltd 功能描述:
MB8146112 制造商:FUJITSU 功能描述:*
MB81461-12PSZ 制造商:FUJITSU 功能描述:VRAM, FAST PAGE, 64KX4, 24 Pin, Plastic, ZIP
MB81461B-12 制造商:FUJITSU 功能描述: 制造商:FUGITSU 功能描述:81461B-12 制造商:FUJITSU 功能描述:81461B-12
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*