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參數(shù)資料
| 型號： | MB814400C-70 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 1 M ×4 BIT Fast Page Mode DRAM(CMOS 1 M ×4 位快速頁面存取模式動態(tài)RAM) |
| 中文描述： | 的CMOS 1米× 4位快速頁面模式的DRAM的CMOS（1米× 4位快速頁面存取模式動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 1/27頁 |
| 文件大?。?/td> | 327K |
| 代理商： | MB814400C-70 |
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DS05-10176-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS 1 M
FAST PAGE MODE DYNAMIC RAM
×
4 BIT
MB814400C-60/-70
CMOS 1,048,576
×
4 Bit Fast Page Mode Dynamic RAM
I
DESCRIPTION
The Fujitsu MB814400C is a fully decoded CMOS Dynamic RAM (DRAM) that contains 4,194,304 memory cells
accessible in 4-bit increments. The MB814400C features a “fast page” mode of operation whereby high-speed
random access of up to 1,024-bits of data within the same row can be selected. The MB814400C DRAM is ideally
suited for mainframe, buffers, hand-held computers video imaging equipment, and other memory applications
where very low power dissipation and high bandwidth are basic requirements of the design. Since the standby
current of the MB814400C is very small, the device can be used as a non-volatile memory in equipment that
uses batteries for primary and/or auxiliary power.
The MB814400C is fabricated using silicon gate CMOS and Fujitsu’s advanced four-layer polysilicon process.
This process, coupled with advanced stacked capacitor memory cells, reduces the possibility of soft errors and
extends the time interval between memory refreshes. Clock timing requirements for the MB814400C are not
critical and all inputs are TTL compatible.
I
PRODUCT LINE & FEATURES
.
Parameter
MB814400C-60
60 ns max.
15 ns max.
30 ns max.
110 ns min.
40 ns min.
336 mW max.
11 mW max. (TTL level)/5.5 mW max. (CMOS level)
MB814400C-70
70 ns max.
20 ns max.
35 ns max.
125 ns min.
45 ns min.
297 mW max.
RAS Access Time
CAS Access Time
Address Access Time
Random Cycle Time
Fast Page Mode Cycle Time
Low power Dissipation
Operating current
Standby current
1,048,576 words
×
4 bit organization
Silicon gate, CMOS, Advanced-Stacked Capacitor
Cell
All input and output areTTL compatible
1024 refresh cycles every 16.4 ms
Self refresh function
Early write or OE controlled write capability
RAS-only CAS-before-RAS, or Hidden Refresh
Fast Page Mode, Read-Modify-Write capability
On chip substrate bias generator for high
performance
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MB814400D-60 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁面存取模式動態(tài)RAM) |
| MB814400D-70 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁面存取模式動態(tài)RAM) |
| MB814405C-60 | CMOS 1M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×4 位超級頁面存取模式動態(tài)RAM) |
| MB814405C-70 | CMOS 1M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×4 位超級頁面存取模式動態(tài)RAM) |
| MB814405D-60 | 1M ×4BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×4 位超級頁面存取模式動態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MB814400C-70PJN | 制造商:FUJITSU 功能描述:Dynamic RAM, Fast Page, 1M x 4, 26 Pin, Plastic, SOJ |
| MB814405D-60PJN | 制造商:FUJITSU Component Ltd 功能描述: |
| MB8146112 | 制造商:FUJITSU 功能描述:* |
| MB81461-12PSZ | 制造商:FUJITSU 功能描述:VRAM, FAST PAGE, 64KX4, 24 Pin, Plastic, ZIP |
| MB81461B-12 | 制造商:FUJITSU 功能描述: 制造商:FUGITSU 功能描述:81461B-12 制造商:FUJITSU 功能描述:81461B-12 |
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