參數(shù)資料
型號: MB814100A-70
廠商: Fujitsu Limited
英文描述: CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動態(tài)RAM)
中文描述: 的CMOS 4米× 1位快速頁面模式的DRAM的CMOS(4分× 1位快速頁面存取模式動態(tài)內(nèi)存)
文件頁數(shù): 2/25頁
文件大小: 309K
代理商: MB814100A-70
2
MB814100A-60/MB814100A-70/MB814100A-80
I
ABSOLUTE MAXIMUM RATINGS (See WARNING)
WARNING:
Permanent device damage may occur if the above
Functional operation should be restricted to the conditions as detailed in the operational sections of
this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings
are exceeded.
I
PACKAGE
Parameter
Symbol
Value
Unit
Voltage at any pin relative to V
SS
V
IN
, V
OUT
–1 to +7
V
Voltage of V
CC
supply relative to V
SS
V
CC
–1 to +7
V
Power Dissipation
P
D
1.0
W
Short Circuit Output Current
50
mA
°
C
Storage Temperature
T
STG
–55 to +125
(Normal Bend)
FPT-26P-M01
(Reverse Bend)
FPT-26P-M02
Marking Side
Marking Side
ZIP-20P-M02
LCC-26P-M04
Package and Ordering Information
– 26-pin plastic (300 mil) SOJ, order as MB814100A-xxPJN
– 20-pin plastic ZIP, order as MB814100A-xxPZ
– 26-pin plastic (300 mil) TSOP, with normal bend leads, order as MB814100A-xxPFTN
– 26-pin plastic (300 mil) TSOP, with reverse bend leads, order as MB814100A-xxPFTN
相關(guān)PDF資料
PDF描述
MB814100A-80 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動態(tài)RAM)
MB814100C-60 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1 位快速頁面存取模式動態(tài)RAM)
MB814100C-70 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位快速頁面存取模式動態(tài)RAM)
MB814100D-60 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁面存取模式動態(tài)RAM)
MB814100D-70 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁面存取模式動態(tài)RAM)
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