參數(shù)資料
型號(hào)： MB814100A-70
廠商： Fujitsu Limited
英文描述： CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
中文描述： 的CMOS 4米× 1位快速頁(yè)面模式的DRAM的CMOS（4分× 1位快速頁(yè)面存取模式動(dòng)態(tài)內(nèi)存）
文件頁(yè)數(shù)： 19/25頁(yè)
文件大小： 309K
代理商： MB814100A-70
19
MB814100A-60/MB814100A-70/MB814100A-80
DESCRIPTION
Test Mode ;
The purpose of this test mode is to reduce device test time to one eighth of that required to test the device conventionally.
The test mode function is entered by performing a WE and CAS-before-RAS (WCBR) refresh for the entry cycle.
In the test mode, read and write operations are executed in units of eights bits which are selected by the address combination of
RA
10
, CA
0
and CA
10
. In the write mode, data at D
IN
is written into eight cells simultaneously. In the read mode, eight cells at the
selected addresses are read back and checked in the following manner.
When the eight bits are all ”L” or all ”H”, a ”H” level is output.
When the eight bits show a combination of ”L” and ”H”, a ”L” level is output.
The test mode function is exited by performing a RAS-only refresh or a CAS-before-RAS refresh for the exit cycle.
In test mode operation, the following parameters are delayed approximately 5ns from the specified value in the data sheet.
t
RC
, t
RWC
, t
RAC
, t
AA
, t
RAS
, t
CSH
, t
RAL
, t
RWD
, t
AWD
, t
PC
, t
PRWC
, t
CPA
, t
RHCP
, t
CPWD
Fig. 14 - TEST MODE SET CYCLE (A
0
to A
10
, D
IN
= ”H” or ”L”)
RAS
CAS
WE
D
OUT
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
t
RP
t
RC
t
RAS
t
RPC
t
CHR
t
CSR
t
CPN
t
WSR
t
WHR
t
OFF
t
OH
HIGH-Z
“H” or “L”
相關(guān)PDF資料
PDF描述
MB814100A-80 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814100C-60 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814100C-70 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814100D-60 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814100D-70 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁(yè)面存取模式動(dòng)態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MB81416-10 制造商:Fuji Electric 功能描述:81416-10/MB
MB81416-12 制造商:Freescale Semiconductor 功能描述:81416-12
MB814400C-70PJN 制造商:FUJITSU 功能描述:Dynamic RAM, Fast Page, 1M x 4, 26 Pin, Plastic, SOJ
MB814405D-60PJN 制造商:FUJITSU Component Ltd 功能描述:
MB8146112 制造商:FUJITSU 功能描述:*
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*