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參數(shù)資料
| 型號： | MAAPGM0027 |
| 英文描述： | 1.0W Power Amplifier 2.0-4.0 GHZ |
| 中文描述： | 1.0W功放2.0-4.0千兆赫 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 270K |
| 代理商： | MAAPGM0027 |
1.0W Power Amplifier 2.0-4.0 GHZ
MAAPGM0027
RO-P-DS-3097
Preliminary Information
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com
for additional data sheets and product information.
1
Features
1.0W Operation
Variable Drain Voltage (4-10V) Operation
MSAG Process
5x5 mm 20 Lead MLP Package
Description
The
MAAPGM0027
is a packaged, 2-stage, 1.0 W power
amplifier with on-chip bias networks in a 20 lead MLP
package, allowing easy assembly. This product is fully
matched to 50 ohms on both the input and output. It can be
used as a power amplifier stage or as a driver stage in high
power applications.
Fabricated using M/A-COM’s repeatable, high performance
and highly reliable GaAs Multifunction Self-Aligned Gate
MESFET Process, each device is 100% RF tested on wafer to
ensure performance compliance.
M/A-COM’s MSAG process features robust silicon-like
manufacturing processes, planar processing of ion
implanted transistors, multiple implant capability enabling
power, low-noise, switch and digital FETs on a single chip,
and polyimide scratch protection for ease of use with
automated manufacturing processes. The use of refractory
metals and the absence of platinum in the gate metal
formulation prevents hydrogen poisoning when employed in
hermetic packaging.
Parameter
Symbol
Absolute Maximum
Units
Input Power
P
IN
15.0
dBm
Drain Supply Voltage
V
DD
+12.0
V
Gate Supply Voltage
V
GG
-3.5
V
Quiescent Drain Current (No RF, 40% IDSS)
I
DQ
360
mA
Quiescent DC Power Dissipated (No RF)
P
DISS
3.3
W
Junction Temperature
T
J
180
°C
Storage Temperature
T
STG
-55 to +150
°C
Maximum Operating Conditions
1
1. Operation outside of these ranges may reduce product reliability.
APGM002
Primary Applications
Wireless Local Loop 3.4-3.6 GHz
MMDS 2.5-2.7 GHz
Radar
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| MAAPGM0034 | LJT 53C 53#20 SKT RECP |
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| MAAPGM0038 | 1.2W Power Amplifier 9.0-12.0 GHZ |
| MAAPGM0064-DIE | Amplifier, Power, 2.0 W 6.5-9.5 GHz |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAAPGM0027-DIE | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:2.0-4.0 GHz 1W Power Amplifier |
| MAAPGM0028 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:2.0-6.5 GHz 0.5W Power Amplifier |
| MAAPGM0029 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:3.6-6.5 GHz 1W Power Amplifier |
| MAAPGM0029-DIE | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Amplifier, Power, 1W 3.5-6.5 GHz |
| MAAPGM0030 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Amplifier, Power, 1W 5.0-9.0 GHz |
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