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參數(shù)資料
| 型號(hào)： | MAAP-000072-PKG003 |
| 英文描述： | Amplifier, Power, 1.3W 17.7-19.7 GHz |
| 中文描述： | 放大器，電源，為1.3W 17.7-19.7千兆赫 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 212K |
| 代理商： | MAAP-000072-PKG003 |
Amplifier, Power, 1.3W
17.7-19.7 GHz
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com
for additional data sheets and product information.
Rev —
Advance Information
1
MAAP-000072-PKG003
RoHS
Compliant
Features
1.3 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
MSAG Process
Description
The
MAAP-000072-PKG0003
is a 4-stage 1.3 W power am-
plifier with on-chip bias networks in a 20 lead MLP package,
allowing easy assembly. This product is fully matched to 50
ohms on both the input and output. It can be used as a
power amplifier stage or as a driver stage in high power ap-
plications.
Each device is 100% RF tested to ensure performance
compliance. The part is fabricated using M/A-COM’s GaAs
Multifunction Self-Aligned Gate (MSAG) Process.
M/A-COM’s MSAG process features robust silicon-like
manufacturing processes, planar processing of ion im-
planted transistors and multiple implant capability enabling
power, low-noise, switch and digital FETs on a single chip.
The use of refractory metals and the absence of platinum in
the gate metal formulation prevents hydrogen poisoning
when employed in hermetic packaging.
1.
2.
T
= MMIC Base Temperature
Adjust V
GG
between –2.6 and –1.2V to achieve specified Idq.
Parameter
Symbol
Typical
Units
Bandwidth
f
17.7-19.7
GHz
Output Power
P
OUT
31
dBm
1-dB Compression Point
P1dB
30
dBm
Small Signal Gain
G
19
dB
Input VSWR
VSWR
2.0:1
Gate Current
I
GG
10
mA
Drain Current
I
DD
750
mA
Output VSWR
VSWR
1.6:1
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50
Ω
, V
DD
= 8V, I
DQ
= 500mA
2
,
P
in
= 12 dBm, R
G
= 200
Ω
Primary Applications
Point-to-Point Radios
18 GHz Band
MACOM
XXXX
AP072G
YYWW
Also Available in:
Description
Die
Part Number
MAAPGM0072-DIE
Die Sample Board
MAAP-000072-SMB004
Die Mechanical Sample
MAAP-000071-MCH000
Packaged Sample Board
MAAP-000072-SMB003
(Lead Free)
Ceramic Package
MAAPGM0072
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAAP-000072-SMB003 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Amplifier, Power, 1.3W 17.7-19.7 GHz |
| MAAP-000072-SMB004 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Amplifier, Power, 1.3W 17.7-19.7 GHz |
| MAAP-000073-PKG003 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Amplifier, Power, 1.0 W 4.4-7.0 GHz |
| MAAP-000073-SMB003 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Amplifier, Power, 1.0 W 4.4-7.0 GHz |
| MAAP-000073-SMB004 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Amplifier, Power, 1.0 W 4.4-7.0 GHz |
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