參數(shù)資料
型號(hào): M5M4V64S40ATP-10L
廠商: Mitsubishi Electric Corporation
英文描述: 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
中文描述: 64M號(hào)(4銀行甲1048576字x 16位)同步DRAM
文件頁(yè)數(shù): 21/51頁(yè)
文件大?。?/td> 1084K
代理商: M5M4V64S40ATP-10L
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.1.3)
Mar'98
M5M4V64S40ATP-8A,-8L,-8, -10L, -10
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
[ Read Interrupted by Burst Terminate ]
Similar to a precharge, the burst terminate command, TBST, can interrupt the burst read operation
and disable the data output. The READ to TBST interval is a minimum of one CLK. TBST is mainly
used to interrupt FP bursts. The figures below show examples, of how the output data is terminated
with TBST.
Read Interrupted by Burst Terminate(BL=4)
CLK
Command
READ
TBST
DQ
Q0
Q1
Q2
Command
READ
TBST
DQ
Q0
Q1
Q2
Q3
Command
READ
TBST
DQ
Q0
Command
READ
TBST
DQ
Q0
Q1
Q2
Command
READ
TBST
DQ
Q0
Q1
Q2
Q3
Command
READ
TBST
DQ
Q0
CL=3
CL=2
21
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V64S40ATP-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M4V64S40ATP-8A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M4V64S40ATP-8L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEDIUM CURRENT SILICON RECTIFIERS
M5M51008AFP-10L 制造商:Mitsubishi Electric 功能描述:Static RAM, 128Kx8, 32 Pin, Plastic, SOP