參數(shù)資料
型號: M5M4V64S40ATP-10L
廠商: Mitsubishi Electric Corporation
英文描述: 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
中文描述: 64M號(4銀行甲1048576字x 16位)同步DRAM
文件頁數(shù): 20/51頁
文件大小: 1084K
代理商: M5M4V64S40ATP-10L
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.1.3)
Mar'98
M5M4V64S40ATP-8A,-8L,-8, -10L, -10
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
[ Read Interrupted by Precharge ]
Burst read operation can be interrupted by precharge of
the same bank
. READ to PRE interval is mini-
mum 1 CLK. A PRE command to output disable latency is equivalent to the /CAS Latency. As a result,
READ to PRE interval determines valid data length to be output. The figure below shows examples of
BL=4.
Read Interrupted by Precharge (BL=4)
CLK
CL=3
Command
DQ
READ
PRE
Q0
Q1
Q2
Command
DQ
READ
PRE
Q0
CL=2
Command
DQ
READ
PRE
Q0
Q1
Q2
Command
DQ
READ
PRE
Q0
Command
DQ
READ PRE
Q0
Q1
Command
DQ
READ PRE
Q0
Q1
20
相關(guān)PDF資料
PDF描述
M5M4V64S40ATP-8 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M4V64S40ATP-8A 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M4V64S40ATP-8L 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M51008CCP-55H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008CCP-55X 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V64S40ATP-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M4V64S40ATP-8A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M4V64S40ATP-8L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEDIUM CURRENT SILICON RECTIFIERS
M5M51008AFP-10L 制造商:Mitsubishi Electric 功能描述:Static RAM, 128Kx8, 32 Pin, Plastic, SOP