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參數(shù)資料
| 型號(hào)： | M5M4V16169DTP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| 中文描述： | 16MCDRAM：16米（100萬(wàn)字由16位）與16K的緩存內(nèi)存（1024字由16位）的SRAM |
| 文件頁(yè)數(shù)： | 48/64頁(yè) |
| 文件大小： | 737K |
| 代理商： | M5M4V16169DTP |
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M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
K
CMd#
Page-Mode DRAM Read Transfer Latency set=2
2
3
4
5
6
7
8
9
10
11
12
13
14
1
RAS#
CAS#
DTD#
Ad0-2
Ad3-11
RB
Old Data
SRAM operation can be freely performed.
** Ad3-Ad7 are column block addresses (Ad8~Ad11=Low).
**C1
CS#
Ad0-Ad2=Low
ACT
DRT
DPD
DNOP
DNOP
BR
BR
BR
BR
BR
BR
BR
BR
BR
DQ0-15
tRCD
Row
Row
tCBF
tRASP
tRSH
Old
Old
Old
Old
DRAM
SRAM
DRT
DRT DRT DRT DRT
PCG
DNOP
DNOP
**C2
**C3
**C4
**C5
**C6
tCBF
tCBF
C1
C2
C6
Q1
Q1
Q2
Q2
Q2
Q2
Q2
Q6
Q6
tPC
tPC
BR
BR
BR
BR
BR
Old
If next DRT happens within the latency,
new data does not transferred to RB.
However this operation is not guaranteed.
48
RB1
Old Data
tCBF
tCBF
tCBF
tCBF tCBF
tCBF
C1
C2
C3
C4
C5
C6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M4V16169DRT-10 | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DRT-15 | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DRT-7 | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DRT-8 | 22182053 |
| M5M4V16G50DFP-10 | 16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M4V16169DTP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP-15 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16G50DFP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM |
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