參數(shù)資料
型號: M5M4V16169DTP
廠商: Mitsubishi Electric Corporation
英文描述: 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
中文描述: 16MCDRAM:16米(100萬字由16位)與16K的緩存內(nèi)存(1024字由16位)的SRAM
文件頁數(shù): 28/64頁
文件大?。?/td> 737K
代理商: M5M4V16169DTP
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
TIMING REQUIREMENTS
(Read, Write, Refresh)
Symbol
Parameter
Unit
Min.
Max
64
tREF
Refresh Cycle Time
Precharge Time
Delay Time, Add Strb. Row to Col.
DRAM Activate-Read Cycle Time
DRAM Activate-Write Cycle Time
Page Cycle Time
ms
ns
ns
ns
ns
ns
ns
tRP
tRCD
tRC*
tWC*
tPC
tRAS
tRASP
Activate Time
Page mode Activate Time
tRWL
tRSH
Write to Precharge Lead Time
Read to Precharge Hold Time
*Note: When tRP and tRAS = Min. values, tRC and tWC = tRP + tRAS.
ns
ns
24
24
80
80
16
56
56
16
16
Limits
Min.
Max
64
-8
-10
10,000
100,000
60
30
30
90
90
20
60
20
20
10,000
ns
100,000
Min.
Max
64
-7
21
21
70
70
14
49
49
14
14
10,000
100,000
28
**-15 spec is the same as M5M4V16169TP/RT-15
Input Pulse Levels:
Input Timing Measurement Reference Level:
VIH=3.0V,VIL=0.0V (LVTTL)
1.5V (LVTTL)
-15
Min.
40
30
120
120
30
70
70
20
20
12,000
100,000
Max
64
(Ta=0~70°C , Vdd=3.3±0.3V for -8,and -10, Vdd=3.3±0.15V for -7
Vss=0V, unless otherwise noted)
相關(guān)PDF資料
PDF描述
M5M4V16169DRT-10 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DRT-15 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DRT-7 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DRT-8 22182053
M5M4V16G50DFP-10 16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V16169DTP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-15 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16G50DFP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM