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參數(shù)資料
| 型號： | M5M4V16169DTP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| 中文描述： | 16MCDRAM：16米（100萬字由16位）與16K的緩存內(nèi)存（1024字由16位）的SRAM |
| 文件頁數(shù)： | 25/64頁 |
| 文件大小： | 737K |
| 代理商： | M5M4V16169DTP |
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M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
**-15 spec is the same as M5M4V16169TP/RT-15
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
1000
0 ~ 70
-65 ~ 150
Symbol
Vcc
V
I
V
O
I
O
Pd
Topr
Parameter
Supply Voltage
Input Voltage
Output Voltage
Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Conditions
With respect to Vss
Ratings
-0.5 ~ 4.6
-0.5 ~ 4.6
-0.5 ~ 4.6
50
Unit
V
V
V
mA
mW
°C
°C
Tstg
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Limits
Typ.
Unit
Min.
Max
Vcc
Vss
VccQ
V
IH
(LVTTL)
V
IH
(LVTTL)
Supply Voltage
Supply Voltage
Supply Voltage for Output
High-level Input Voltage clock and add.
High-level Input Voltage master clock (K)
3.0
0
3.0
2.0
2.2
3.3
0
3.3
3.6
0
3.6
V
V
V
V
V
CAPACITANCE
(Ta=0~70°C , Vdd=3.3±0.3V for -8,and -10, Vdd=3.3±0.15V for -7
Vss=0V, unless otherwise noted)
Symbol
C
I(A)
C
I(C)
C
I/O
Parameter
Test Condition
V
I
=Vss
f=1MHz
V
I
=25mVrms
Limits (MAX)
5
5
7
Unit
pF
pF
pF
Input Capacitance, Address pin
Input Capacitance, Clock pin
Input Capacitance, I/O pin
25
(Ta=0~70°C , Vdd=3.3±0.3V for -8,and -10, Vdd=3.3±0.15V for -7
Vss=0V, unless otherwise noted)
V
IL
(LVTTL)
Low-level Input Voltage all inputs
Vdd+0.3
Vdd+0.3
-0.3
0.8
V
(LVTTL)
High-level Input Voltage data pin
2.0
VddQ+0.3
V
V
IH
ABSOLUTE MAXIMUM RATINGS
(Ta=0~70°C , Vdd=3.3±0.3V for -8,and -10, Vdd=3.3±0.15V for -7
Vss=0V, unless otherwise noted)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M4V16169DRT-10 | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DRT-15 | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DRT-7 | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DRT-8 | 22182053 |
| M5M4V16G50DFP-10 | 16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M4V16169DTP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP-15 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16G50DFP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM |
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