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參數(shù)資料
| 型號： | M58LW064C110N1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| 中文描述： | 64兆位（4Mb的x16插槽，統(tǒng)一座，突發(fā)）3V電源快閃記憶體 |
| 文件頁數(shù)： | 8/53頁 |
| 文件大?。?/td> | 319K |
| 代理商： | M58LW064C110N1T |
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M58LW064A, M58LW064B
8/53
BUS OPERATIONS
The following operations can be performed using
the appropriate bus configuration:
Asynchronous
– Read Array
– Read Electronic Signature
– Read Block Protection
– Read Status Register
– Read Query
– Write
– Output Disable
– Standby
– Reset/Power-down
Synchronous
– Address Latch
– Burst Read
– Burst Read Suspend
– Burst Read Interrupt
– Burst Read Resume
– Burst Address Advance
See Tables 3, 4, 5, 6 and 7.
COMMAND INTERFACE
Instructions, made up of Commands written in Cy-
cles, can be given tothe Program/Erase Controller
(P/E.C.) by writing to the Command Interface
(C.I.). At power-up or on exit from power down or
if V
DD
is lower than V
LKO
, the Command Interface
is resetto Read Array. Any incorrect commandwill
reset thedevice to Read Array. Anyimproper com-
mand sequence will cause the Status Register to
report the error condition and the device will de-
fault to Read Status Register.
The internal Program/Erase Controller (P/E.C.)
automatically handles all timing and verification of
the Program and Erase operations. The Status
Register information P/ECS on DQ7 can be read
at any time, during programming or erase, to mon-
itor the progress of the operation.
Table 3. Asynchronous Bus Operations
(1)
Note: 1. X = Don’t Care V
IL
or V
IH
. High = V
IH
or V
HH
.
2. = need to check with designers - X or V
IL
Operation
E
G
W
RP
L
DQ0-DQ31
Read Array
V
IL
V
IL
V
IH
High
X
Data Output
Read Electronic Signature or
Block Protection Status
V
IL
V
IL
V
IH
High
X
Manufacturer or Device Code
Output Block Protection Status
Read Status
P/E.C. Active
V
IL
V
IL
V
IH
High
X
Status Register Output
Read Query
V
IL
V
IL
V
IH
High
X
CFI Query Output
Write
V
IL
V
IH
V
IL
High
V
IL
Data Input
Output Disable
V
IL
V
IH
V
IH
High
X
High Z
Standby
V
IH
X
X
High
X
High Z
Reset/Power-down
X
X
X
V
IL
X
High Z
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064C110N6 | 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW064C110N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064C110ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064C110ZA6 | 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW064C110ZA6T | 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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