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參數資料
| 型號： | M58LW064C110N1T |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| 中文描述： | 64兆位（4Mb的x16插槽，統(tǒng)一座，突發(fā)）3V電源快閃記憶體 |
| 文件頁數： | 16/53頁 |
| 文件大?。?/td> | 319K |
| 代理商： | M58LW064C110N1T |
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M58LW064A, M58LW064B
16/53
Table 10. Burst Configuration Register
(1)
Note: 1. The BCR defines both the read mode and the burst configuration.
2. Synchronous burst length is defined as Word or Double-Word, the data bus width depends only on the WORD input.
Asynchronous Page read is two Words or one Double-Word.
3. A burst length of 8 is not available for x32 organisation.
4. At F
K
> 50MHz when X-Latency = 10 or 12, Y-Latency = 2 independent of the value of M9.
At F
K
= 66MHz when X-Lantency = 14 or 16, Y-Latency = 2 indepedent of the value of M9.
5. Latency 7 valid only for continuous burst. Otherwisw Latency = 8.
6. Latency 10 valid only for continuous burst. Otherwisw Latency = 12.
7. Latency 11 valid only for continuous burst. Otherwisw Latency = 12.
8. Latency 14 valid only for continuous burst. Otherwisw Latency = 16.
BCR mode bit
Description
Value
Description
M15
Read Select
0
Synchronous Burst Read
1
Asynchronous Read
M14-M11
X-Latency
(4)
0001
Reserved
0010
7, only for F
K
= 33MHz
(5)
0011
8, only for F
K
= 33MHz
0100
9, only for F
K
= 33MHz
0101
10, only for F
K
= 50MHz
(6)
0110
11, only for F
K
= 50MHz
(7)
1001
12, only for F
K
= 50MHz
1010
13, only for F
K
= 50MHz
1011
14, only for F
K
= 66MHz
(8)
1101
16, only for F
K
= 66MHz
M9
Y-Latency
(4)
0
One Burst Clock cycle
1
Two Burst Clock cycles
M8
Valid Data Ready
0
R valid Low during valid Burst Clock edge
1
R valid Low one data cycle before valid Burst Clock edge
M7
Burst Type
0
Interleaved
1
Sequential
M6
Valid Clock Edge
0
Falling Burst Clock edge
1
Rising Burst Clock edge
M3
Asynchronous
0
Random Read
1
Latch Enable Controlled Read
M2-M0
Burst Length
(2)
100
1 Word or Double-Word
101
2 Words or Double-Words
001
4 Words or Double-Words
010
8 Words or Double-Words
(3)
111
Continuous
相關PDF資料 |
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|---|---|
| M58LW064BZA | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150NH6T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064B150NH6T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064BNH | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064BNF | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M58LW064C110N6 | 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW064C110N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064C110ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064C110ZA6 | 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW064C110ZA6T | 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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