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參數(shù)資料
| 型號： | M58LW064C110N1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| 中文描述： | 64兆位（4Mb的x16插槽，統(tǒng)一座，突發(fā)）3V電源快閃記憶體 |
| 文件頁數(shù)： | 26/53頁 |
| 文件大?。?/td> | 319K |
| 代理商： | M58LW064C110N1T |
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M58LW064A, M58LW064B
26/53
Table 18. Block Status Register (see also, Table 6 and 7 in the datasheet)
Note: 1. BA specifies the block address location, i-e, A22-A17.
2. Not Supported.
Table 19. Extended Query information
Note: 1. Bit7 to bit4 are coded in Hexadecimal and scaled in Volt while bit3 to bit0 are in Binary Code Decimal and scaled in mV.
2. Not supported.
Address
A22-A2
Data (Hex) x32 organization
Selected Block Information
(BA+3)h
(1)
bit0
0
Block Unlocked
1
Block Locked
bit1
0
Last erase operation ended successfully
(2)
1
Last erase operation not ended successfully
(2)
bit7-2
0
Reserved for future features
M58LW064B - x32
M58LW064A - x16
M58LW064B -
x16 organization
Instruction
Address
offset
Address
A22-A2
Data (Hex)
x32 organization
Address
A22-A1
Data
(P)h
31h
50h
”P”
62h, 63h
50h
Query ASCII string - Extended Table
(P+1)h
32h
52h
”R”
64h, 65h
52h
(P+2)h
33h
49h
”Y”
66h, 67h
49h
(P+3)h
34h
31h
68h, 69h
31h
Major version number
(P+4)h
35h
31h
6Ah, 6Bh
31h
Minor version number
(P+5)h
36h
0Eh
6Ch, 6Dh
0Eh
Optional Feature: (1=yes, 0=no)
bit0, Chip Erase Supported (0=no)
bit1, Suspend Erase Supported (1=yes)
bit2, Suspend Program Supported (1=yes)
bit3, Lock/Unlock Supported (1=yes)
bit4, Queue Erase Supported (0=no)
Bit 31-5 reserved for future use
(P+6)h
37h
00h
6Eh, 6Fh
00h
Optional Features
(P+7)h
38h
00h
70h, 71h
00h
(P+8)h
39h
00h
72h, 73h
00h
(P+9)h
3Ah
01h
74h, 75h
00h
Function allowed after Suspend:
Program allowed after Erase Suspend (1=yes)
Bit 7-1 reserved for future use
(P+A)h
3Bh
00h
(2)
76h, 77h
00h
(2)
Block Status Register Mask
(P+C)h
3Ch
33h
78h, 79h
33h
V
CC
OPTIMUM Program/Erase voltage conditions
(P+D)h
3Dh
50h
7Ah, 7Bh
50h
V
PP
OPTIMUM Program/Erase voltage conditions
(P+E)h
3Eh
00h
7Ch, 7Dh
00h
Reserved for future use
(P+F)h
3Fh
00h
7Dh, 7Fh
00h
Reserved for future use
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064C110N6 | 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW064C110N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064C110ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064C110ZA6 | 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW064C110ZA6T | 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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