參數(shù)資料
型號(hào): M41ST85WMH6TR
廠商: STMICROELECTRONICS
元件分類: 時(shí)鐘/數(shù)據(jù)恢復(fù)及定時(shí)提取
英文描述: 1 TIMER(S), REAL TIME CLOCK, PDSO28
封裝: 0.300 INCH, SNAPHAT, PLASTIC, SOH-28
文件頁數(shù): 10/41頁
文件大?。?/td> 376K
代理商: M41ST85WMH6TR
Operating modes
M41ST85W
If data retention lifetime is a critical parameter for the system, it is important to review the
data retention current specifications for the particular SRAMs being evaluated. Most SRAMs
specify a data retention current at 3.0 volts. Manufacturers generally specify a typical
condition for room temperature along with a worst case condition (generally at elevated
temperatures). The system level requirements will determine the choice of which value to
use. The data retention current value of the SRAMs can then be added to the IBAT value of
the M41ST85W to determine the total current requirements for data retention. The available
battery capacity for the SNAPHAT top of your choice can then be divided by this current to
determine the amount of data retention available (see Table 19 on page 38).
For a further more detailed review of lifetime calculations, please see application note
AN1012.
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參數(shù)描述
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