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參數(shù)資料
| 型號： | M37643M8-XXXHP |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, MROM, 12 MHz, MICROCONTROLLER, PQFP80 |
| 封裝： | 12 X 12 MM, 0.50 MM PITCH, PLASTIC, LQFP-80 |
| 文件頁數(shù)： | 106/120頁 |
| 文件大?。?/td> | 1253K |
| 代理商： | M37643M8-XXXHP |
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86
7643 Group
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
MITSUBISHI MICROCOMPUTERS
PRELIMINAR
Y
Notice:
This
is not
a final
specification.
Some
parametric
limits
are
subject
to
change.
Table 20 Summary of M37643F8 (flash memory version)
FLASH MEMORY MODE
The M37643F8FP/HP (flash memory version) has an internal new
DINOR (DIvided bit line NOR) flash memory that can be rewritten
with a single power source when VCC is 5 V, and 2 power sources
when VPP is 5 V and VCC is 3.3 V in the CPU rewrite and standard
serial I/O modes.
For this flash memory, three flash memory modes are available in
which to read, program, and erase: the parallel I/O and standard
serial I/O modes in which the flash memory can be manipulated
using a programmer and the CPU rewrite mode in which the flash
memory can be manipulated by the Central Processing Unit
(CPU).
Summary
Table 20 lists the summary of the M37643F8 (flash memory ver-
sion).
This flash memory version has some blocks on the flash memory
as shown in Figure 78 and each block can be erased. The flash
memory is divided into User ROM area and Boot ROM area.
In addition to the ordinary User ROM area to store the MCU op-
eration control program, the flash memory has a Boot ROM area
that is used to store a program to control rewriting in CPU rewrite
and standard serial I/O modes. This Boot ROM area has had a
standard serial I/O mode control program stored in it when
shipped from the factory. However, the user can write a rewrite
control program in this area that suits the user’s application sys-
tem. This Boot ROM area can be rewritten in only parallel I/O
mode.
Item
Power source voltage (For Program/Erase)
VPP voltage (For Program/Erase)
Flash memory mode
Erase block division
User ROM area
Boot ROM area
Program method
Erase method
Program/Erase control method
Number of commands
Number of program/Erase times
ROM code protection
Specifications
Vcc = 3.00 – 3.60 V, 4.50 – 5.25 V (f(XIN) = 24 MHz,
φ = 6 MHz) (Note 1)
VPP = 4.50 – 5.25 V
3 modes; Flash memory can be manipulated as follows:
(1) CPU rewrite mode: Manipulated by the Central Processing Unit (CPU)
(2) Parallel I/O mode: Manipulated using an external programmer (Note 2)
(3) Standard serial I/O mode: Manipulated using an external programmer (Note 2).
See Figure 78.
1 block (4 Kbytes) (Note 3)
Byte program
Batch erasing/Block erasing
Program/Erase control by software command
6 commands
100 times
Available in parallel I/O mode and standard serial I/O mode
Notes 1: After programming/erasing at Vcc = 3.0 to 3.6 V, the MCU can operate only at Vcc = 3.0 to 3.6 V.
After programming/erasing at Vcc = 4.5 to 5.25 V or programming/erasing with the exclusive external equipment flash programmer, the MCU can
operate at both Vcc = 3.0 to 3.6 V and 4.15 to 5.25 V.
2: In the parallel I/O mode or the standard serial I/O mode, use the exclusive external equipment flash programmer which supports the 7643 Group
(flash memory version).
3: The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory. This Boot ROM area can be
rewritten in only parallel I/O mode.
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