參數(shù)資料
型號： M36WT864T10ZA6T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
中文描述： 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多
文件頁數(shù)： 70/92頁
文件大?。?/td> 624K
代理商： M36WT864T10ZA6T
M36WT864TF, M36WT864BF
70/92
Table 36. CFI Query System Interface Information
Table 37. Device Geometry Definition
Offset
Data
Description
Value
1Bh
0017h
V
DD
Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1.7V
1Ch
0022h
V
DD
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
2.2V
1Dh
0017h
V
PPF
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
1.7V
1Eh
00C0h
V
PPF
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
12V
1Fh
0004h
Typical time-out per single byte/word program = 2
n
μs
16μs
20h
0003h
Typical time-out for quadruple word program = 2
n
μs
8μs
21h
000Ah
Typical time-out per individual block erase = 2
n
ms
1s
22h
0000h
Typical time-out for full chip erase = 2
n
ms
NA
23h
0003h
Maximum time-out for word program = 2
n
times typical
128μs
24h
0004h
Maximum time-out for quadruple word = 2
n
times typical
128μs
25h
0002h
Maximum time-out per individual block erase = 2
n
times typical
4s
26h
0000h
Maximum time-out for chip erase = 2
n
times typical
NA
Offset Word
Mode
Data
Description
Value
27h
0017h
Device Size = 2
n
in number of bytes
8 MByte
28h
29h
0001h
0000h
Flash Device Interface Code description
x16
Async.
2Ah
2Bh
0003h
0000h
Maximum number of bytes in multi-byte program or page = 2
n
8 Byte
2Ch
0002h
Number of identical sized erase block regions within the device
bit 7 to 0 = x = number of Erase Block Regions
2
M
2Dh
2Eh
007Eh
0000h
Region 1 Information
Number of identical-size erase blocks = 007Eh+1
127
2Fh
30h
0000h
0001h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
64 KByte
31h
32h
0007h
0000h
Region 2 Information
Number of identical-size erase blocks = 0007h+1
8
33h
34h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
8 KByte
35h
38h
0000h
Reserved for future erase block region information
NA
相關(guān)PDF資料
PDF描述
M36WT864TF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864B85ZA6T 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T70ZA6T 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864TFZA 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864BFZA 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36WT864T70ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T85ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864TF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864TF70ZA6T 功能描述:組合存儲器 64M (4Mx16) 70ns RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray
M36WT864TFZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
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